(a) The configuration of a complete microcircuit on a diamond anvil: (1) the Mo electrodes, (2) the exposed diamond anvil, (3) the layer deposited on the Mo film, and (4) the layer deposited on the diamond anvil. (b) The cross section of the designed diamond-anvil-cell device: (1) the gasket, (2) the sample chamber, (3) the Mo electrodes, and (4) the layer deposited on the Mo film. , , , and are the four contact ends of the microcircuit.
XRD pattern and FE-SEM and TEM images of the dumbbell-like ZnO microcrystals: (a) XRD pattern, (b) low-resolution FE-SEM image, (c) high-resolution FE-SEM image, and (d) TEM image and SAED patterns (inset).
Raman spectra of the dumbbell-like ZnO microcrystals at room temperature: (a) at ambient pressure and (b) at different pressures during the course of the compression and the decompression.
Electrical resistivity of the dumbbell-like ZnO microcrystals as a function of pressure at room temperature. The inset is the FE-SEM image of the ZnO sample after a downstroke from 34.86 GPa to ambient pressure.
Pressure dependence of the electrical resistivity for the dumbbell-like ZnO microcrystals annealed at different conditions: (a) unannealed, (b) in air at for 1 h, and (c) in nitrogen with 5% hydrogen at for 1 h.
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