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Temperature sensitivity of tensile-strained GaAsP/(AlGa)As double-barrier separate confinement heterostructure laser diodes for 800 nm band
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10.1063/1.2938042
/content/aip/journal/jap/103/11/10.1063/1.2938042
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/11/10.1063/1.2938042

Figures

Image of FIG. 1.
FIG. 1.

DBSCH SQW structure scheme: Al content (black solid) and (Zn, Si) doping profiles (blue dotted lines) are shown for the version C, while the calculated optical field intensity profiles (I) are shown for C and C' versions (red solid and broken lines, respectively). The is nominally 15 nm thick and - and -cladding layers are thick for all versions. The data specific for particular versions are given in Table I.

Image of FIG. 2.
FIG. 2.

EL spectra in a photon energy range above the laser line (marked by LA) of LD of made from the growth c0276 (A version). Pulsed operation (400 ns 5 kHz). To separate spatially TM and TE plots, the later data are shown after dividing by 3.

Image of FIG. 3.
FIG. 3.

EL spectra of InGaAs/AlGaAs LD in a photon energy range above the laser line . Emission from waveguide layers (each thick) is indicated by arrow. Spontaneous emission from QW is not seen because of serious multiplier sensitivity drop for wavelengths above 850 nm.

Image of FIG. 4.
FIG. 4.

EL spectra for LD of manufactured from growth 3551 (C version).

Image of FIG. 5.
FIG. 5.

EL spectra for LD of manufactured from growth 3572 (C' version).

Image of FIG. 6.
FIG. 6.

EL spectra for LD of manufactured from growth 3589 (F version).

Image of FIG. 7.
FIG. 7.

Normalized TM components of EL spectra of threshold-driven LDs presented in Figs. 2 and 4–6. The abscissa origin for each diode is set at energy indicated by respective mark LA in Figs. 2 and 4–6. The actual values for particular diodes are displayed.

Image of FIG. 8.
FIG. 8.

EL spectra of threshold-driven LDs presented in Figs. 2 and 4–6, shown in the order of decreasing (and ). TM and TE components, and .

Tables

Generic image for table
Table I.

DBSCH SQW design versions: , , , , , and are thicknesses (d) and compositions (Al contents x) of waveguide, barrier, gradient, and cladding layers, respectively. are calculated confinement factors for TM polarization (for TE they are 1.2–1.35 times those of TM).

Generic image for table
Table II.

Heterostructure and device characteristics of the DBSCH epiwafers used in this work. Quoted values are from among the best-measured samples of each version (Ref. 13).

Generic image for table
Table III.

TE to TM component ratios of the EL spectra (at threshold) of analyzed LD versions. is the TE to TM peak ratio (disregarding peak positions) for both temperatures: and .

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/content/aip/journal/jap/103/11/10.1063/1.2938042
2008-06-11
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature sensitivity (T0) of tensile-strained GaAsP/(AlGa)As double-barrier separate confinement heterostructure laser diodes for 800 nm band
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/11/10.1063/1.2938042
10.1063/1.2938042
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