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Effect of chlorine residue on electrical performance of atomic layer deposited hafnium silicate
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10.1063/1.2938073
/content/aip/journal/jap/103/11/10.1063/1.2938073
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/11/10.1063/1.2938073
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Band offset diagram of and Si interface.

Image of FIG. 2.
FIG. 2.

(a) The relative formation energy of substitutional defects; (b) the relaxed structure of (b) charged substitutional defects; (c) charged substitutional defects.

Image of FIG. 3.
FIG. 3.

(a) The relative formation energy of interstitial defects; (b) the relaxed structure of charged interstitial defects.

Image of FIG. 4.
FIG. 4.

The local density of states of (a) charged substitutional defects; (b) charged substitutional defects; (c) charged interstitial defects.

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/content/aip/journal/jap/103/11/10.1063/1.2938073
2008-06-04
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of chlorine residue on electrical performance of atomic layer deposited hafnium silicate
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/11/10.1063/1.2938073
10.1063/1.2938073
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