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Growth and optical investigation of self-assembled InGaN quantum dots on a GaN surface using a high temperature AlN buffer
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10.1063/1.2939568
/content/aip/journal/jap/103/12/10.1063/1.2939568
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/12/10.1063/1.2939568
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(0002) XRD rocking curve of the GaN grown on high temperature AlN buffer, showing an extremely narrow FWHM of .

Image of FIG. 2.
FIG. 2.

Typical AFM images of InGaN QDs grown under a flow rate of (a) 8.0 slm, showing that the QDs with an approximate density of are in a diameter of about 50 nm and a height of about 8 nm. (b) 6.0 slm, indicating that the QD density is significantly increased to and that the diameter and height are reduced to about 20 and 2.8 nm, respectively. (c) 4.0 slm, showing that the QDs disappear.

Image of FIG. 3.
FIG. 3.

PL spectra of the InGaN QDs grown under different flow rates, all measured at 10 K using a He–Cd laser.

Image of FIG. 4.
FIG. 4.

PL spectra of the InGaN QDs grown at 755 and under a flow rate of 6 slm, measured at 10 K using a He–Cd laser.

Image of FIG. 5.
FIG. 5.

PL spectra of the samples with InGaN multiple QD layers with 12 and 28 nm thick GaN barrier, respectively, measured at 10 K using a He–Cd laser.

Image of FIG. 6.
FIG. 6.

AFM images of (a) the InGaN multiple QD layers with a 12 nm thick GaN barrier, i.e., sample E, showing a high density of QDs with a good uniformity and (b) the InGaN multiple QD layers with a 28 nm thick GaN barrier, i.e., sample F, showing that the QDs disappear.

Image of FIG. 7.
FIG. 7.

(a) Emission spectra of sample E under optical pumping using a YAG laser from 1.21 to , where the stimulated emission can be clearly observed, and inset gives the integrated emission intensity as a function of optical pumping power, from which the threshold of optical pumping can be determined. (b) Emission spectra of sample E under the conditions of identical optical pumping to sample F, which does not show any sign of stimulated emission. In all cases, the pulse repetition rate of the YAG laser is 850 Hz and the pulse width is 9 ns.

Image of FIG. 8.
FIG. 8.

(a) Emission spectra of sample G under optical pumping using a YAG laser from 1.21 to , where the stimulated emission can be clearly observed, and inset gives the integrated emission intensity as a function of optical pumping power, from which the threshold of optical pumping can be determined. (b) Emission spectra of sample H under the conditions of identical optical pumping to sample H, indicating that there is no stimulated emission to be observed. In all cases, the pulse repetition rate of the YAG laser is 850 Hz and the pulse width is 9 ns.

Image of FIG. 9.
FIG. 9.

AFM images of (a) the InGaN multiple QD layers with the GaN barrier grown at , i.e., sample G, showing a high density of QDs with a good uniformity and (b) the InGaN multiple QD layers with the GaN barrier grown at , i.e., sample H, indicating the QDs disappear.

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/content/aip/journal/jap/103/12/10.1063/1.2939568
2008-06-19
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth and optical investigation of self-assembled InGaN quantum dots on a GaN surface using a high temperature AlN buffer
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/12/10.1063/1.2939568
10.1063/1.2939568
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