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Surface stress effects on the resonant properties of silicon nanowires
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10.1063/1.2939576
/content/aip/journal/jap/103/12/10.1063/1.2939576
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/12/10.1063/1.2939576

Figures

Image of FIG. 1.
FIG. 1.

Illustration of the diamond cubic lattice structure of silicon. Black atoms represent standard fcc unit cell atoms, while green atoms represent the interpenetrating fcc lattice. The drawn bonds connect atoms in fcc lattice B to atoms in fcc lattice A.

Image of FIG. 2.
FIG. 2.

Illustration of the nine atom surface unit cell for the surface with a normal of a diamond cubic crystal. Black atoms represent fcc lattice A, while green atoms represent the interpenetrating fcc lattice B. The drawn bonds connect atoms in fcc lattice B to atoms in fcc lattice A.

Image of FIG. 3.
FIG. 3.

Nanowire geometry considered for numerical examples.

Image of FIG. 4.
FIG. 4.

Minimum energy configuration of a fixed/free silicon nanowire due to surface stresses as predicted by (top) MS calculation, (bottom) SCB calculation.

Image of FIG. 5.
FIG. 5.

Normalized resonant frequencies for constant CSA silicon nanowires.

Image of FIG. 6.
FIG. 6.

Normalized resonant frequencies for constant length silicon nanowires.

Image of FIG. 7.
FIG. 7.

Normalized resonant frequencies for constant SAV silicon nanowires.

Image of FIG. 8.
FIG. 8.

Normalized Young’s modulus for both fixed/fixed and fixed/free boundary conditions for constant CSA nanowires.

Image of FIG. 9.
FIG. 9.

Normalized resonant frequencies for fixed/fixed constant CSA, SAV, and length nanowires plotted against the nanowire aspect ratio.

Image of FIG. 10.
FIG. 10.

Normalized resonant frequencies for fixed/free constant CSA, SAV, and length nanowires plotted against the nanowire aspect ratio.

Tables

Generic image for table
Table I.

Summary of geometries considered: constant SAV ratio, constant length, and constant CSA. All dimensions are in nanometers (nm).

Generic image for table
Table II.

Summary of constant CSA nanowire fundamental resonant frequencies for fixed/free boundary conditions as computed from: (1) The analytic solution given by Eq. (24), (2) BCB, and (3) SCB calculations. All frequencies are in megahertz (MHz), the nanowire dimensions are in nm.

Generic image for table
Table III.

Summary of constant CSA nanowire fundamental resonant frequencies for fixed/fixed boundary conditions as computed from: (1) The analytic solution given by Eq. (25), (2) BCB, and (3) SCB calculations. All frequencies are in MHz, the nanowire geometry is in nm.

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/content/aip/journal/jap/103/12/10.1063/1.2939576
2008-06-16
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface stress effects on the resonant properties of silicon nanowires
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/12/10.1063/1.2939576
10.1063/1.2939576
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