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Analysis of -rich layers for photovoltaic applications: Influence of the sulfurization temperature on the crystalline properties of electrodeposited and sulfurized precursors
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10.1063/1.2939833
/content/aip/journal/jap/103/12/10.1063/1.2939833
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/12/10.1063/1.2939833
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM cross section (left) and top view (right) images obtained from the precursor annealed at the lowest temperature .

Image of FIG. 2.
FIG. 2.

SEM cross section (left) and top view (right) images obtained from the precursor annealed at the highest temperature .

Image of FIG. 3.
FIG. 3.

Raman spectra obtained from the surface of the three samples annealed at different nominal temperatures: (a) , (b) , and (c) .

Image of FIG. 4.
FIG. 4.

AES depth profile (top) and Raman spectra measured at different depths (bottom) from the sample annealed at .

Image of FIG. 5.
FIG. 5.

AES depth profile (top) and Raman spectra measured at different depths (bottom) from the sample annealed at .

Image of FIG. 6.
FIG. 6.

Raman spectrum obtained from the bulk of samples annealed at after a sputtering time of 54 min, showing the presence of additional bands that may be related to a Cu-rich phase.

Image of FIG. 7.
FIG. 7.

XRD diffractograms from samples annealed at and .

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/content/aip/journal/jap/103/12/10.1063/1.2939833
2008-06-23
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analysis of S-rich CuIn(S,Se)2 layers for photovoltaic applications: Influence of the sulfurization temperature on the crystalline properties of electrodeposited and sulfurized CuInSe2 precursors
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/12/10.1063/1.2939833
10.1063/1.2939833
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