(a) Scanning electron microscope image of the optical switch with schematic representation of the photocurrent autocorrelation experiment to determine the current pulse characteristics of the LT-GaAs photo switch. (b) Optical microscope image of the optical switch area including the patterned magnetic Fe structures at both sides: an array of two micron-sized structures to the left and an Fe stripe pattern to the right. On top, the schematic representation of the experiment to monitor the magnetization dynamics is given.
(a) Current vs voltage characteristics of the photoswitch structure ( gap) under illumination varying the laser power from 1 to 17 mW, showing the nonlinearity of the photocurrent with the illumination power. (b) Photocurrent autocorrelation ( gap structure, 3 V gap voltage). The solid line shows the analysis using a double exponential decay of the photocurrent toward zero delay between the two laser pulses illuminating the gap.
Magnetic response of a 30 nm thick Fe stripe pattern on the center conductor for the short time scale for different voltages, 0 (reference), 28, and 60 V, applied to the photoconductive switch. Overlaid on the data, the results of the micromagnetic simulation are shown (dashed line). In the inset, the signal for 28 V is shown on a larger time scale. As a reference a Gaussian function (3 ps) is plotted to indicate the field pulse (dotted line).
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