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Increase in oxide hole trap density associated with nitrogen incorporation at the interface
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10.1063/1.2940736
/content/aip/journal/jap/103/12/10.1063/1.2940736
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/12/10.1063/1.2940736
/content/aip/journal/jap/103/12/10.1063/1.2940736
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/content/aip/journal/jap/103/12/10.1063/1.2940736
2008-06-24
2014-09-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/12/10.1063/1.2940736
10.1063/1.2940736
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