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Observation of femtosecond carrier thermalization time in indium nitride
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View: Figures


Image of FIG. 1.
FIG. 1.

Measured transient transmission changes (solid lines) as functions of time delay at central wavelengths of 1300 nm (0.953 eV), 1340 nm (0.923 eV), and 1430 nm (0.866 eV) with a fixed photoexcited carrier density of . All traces are in the perturbative regime. Traces are vertically displaced for clarity. Dotted lines are convolution fits.

Image of FIG. 2.
FIG. 2.

Measured transient transmission changes as functions of time delay at the excitation photon energy of 0.953 eV with photoexcited carrier densities of (bottom to top) , , , and . The inset shows the transient transmission change at the same photon energy with a high photoexcited carrier density of .

Image of FIG. 3.
FIG. 3.

Normalized LO phonon emission rate (solid line) and the inverse of the carrier cooling time at a central wavelength of 1300 nm (open circles and full rectangles) as functions of total electron density. This figure was modified from Ref. 5, in which a detailed description can be found. The open circles represent the data taken in the previous study which had a higher background doping density of . The solid squares represent the data taken in this study which had a lower background doping density .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of femtosecond carrier thermalization time in indium nitride