characteristics of device sweeping the voltage from zero to a maximum value and then back to zero on a semilogarithmic scale, which was obtained at the first time, second time, and after applying a voltage of 10 V sweeping. The inset shows the curves of device in second time sweep on a linear scale.
The retention time of both high conductance states and low conductance states at 1.5 V probe voltage of different positive erase voltages.
Characteristics of the device and the device sweeping the voltage from zero to a maximum value and then back to zero on a semilogarithmic scale.
Characteristics of the 150 nm -based devices with different electrodes.
Characteristics of the devices by sweeping the voltage from 0 to 10 V and then back to 0 at different conditions on a logarithmic scale.
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