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Additional stress-induced band gap narrowing in a silicon die
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10.1063/1.2833435
/content/aip/journal/jap/103/2/10.1063/1.2833435
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/2/10.1063/1.2833435
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Compression apparatus and (b) a pattern of STI blocks in a junction.

Image of FIG. 2.
FIG. 2.

ENEXSS stress plot of -axis stresses for (a) ; (b) ; and (c) cases. Note that the tensile region increases with distance between adjacent STI trenches.

Image of FIG. 3.
FIG. 3.

Reverse bias leakage currents of the broadest diode plotted as a function of (a) reverse bias and (b) uniaxial compression along the direction.

Image of FIG. 4.
FIG. 4.

Measured coefficients as a function of the tensile region/total region ratio in the test structures.

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/content/aip/journal/jap/103/2/10.1063/1.2833435
2008-01-25
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Additional stress-induced band gap narrowing in a silicon die
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/2/10.1063/1.2833435
10.1063/1.2833435
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