Volume 103, Issue 2, 15 January 2008
Index of content:
103(2008); http://dx.doi.org/10.1063/1.2831293View Description Hide Description
Si self-diffusion in thermally grown near the interface during thermal oxidation process was studied using isotopic heterostrucutures as a function of the oxidation temperature, the oxidation time, and the fraction of oxygen in the ambient gas. The Si self-diffusivity near the interface during oxidation was found to be larger than the thermal Si self-diffusivity by more than one order of magnitude. This enhancement indicates that Si species are emitted from the interface and diffused into during oxidation, as has been predicted by recent theoretical studies.
103(2008); http://dx.doi.org/10.1063/1.2829778View Description Hide Description
The multiferroic compound crystallizing into hexagonal perovskite was investigated by using an in situhigh pressureRaman scattering method at room temperature. It is found that with increasing pressure, the compound started to transform from hexagonal-type into an orthorhombic-type perovskite near . The phase transition process is analyzed.
103(2008); http://dx.doi.org/10.1063/1.2833435View Description Hide Description
Semiconductor devices have intrinsic mechanical stress due to two separate sources, silicon wafer processing and packaging. This intrinsic stress induces band gap narrowing and consequent degradation of device reliability. In this work, a silicon die that included shallow trench isolation structures was used with additional external compression to clarify the interaction effects on band gap narrowing between stresses induced by different factors. It was observed that the pressure coefficient due to the additional external compression is linearly dependent on the intrinsic tensile region/total region ratio of a diode.