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Electron capture and emission properties of interface states in thermally oxidized and NO-annealed
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10.1063/1.2837028
/content/aip/journal/jap/103/3/10.1063/1.2837028
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/3/10.1063/1.2837028
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

data at 1 MHz for (a) AO and (b) NO MOS capacitors.

Image of FIG. 2.
FIG. 2.

CCDLTS spectra for the AO sample measured with (a) varying filling pulse duration at filling pulse voltage 13 V and (b) varying filling pulse voltage at 20 ms duration. The rate window is 8.6 ms and the constant capacitance is 42 pF.

Image of FIG. 3.
FIG. 3.

CCDLTS spectra for the NO sample measured with (a) varying filling pulse duration at filling pulse voltage 5 V and (b) with varying filling pulse voltage at 20 ms duration. The rate window is 8.6 ms and the constant capacitance is 18 pF.

Image of FIG. 4.
FIG. 4.

CCDLTS spectra measured for (a) AO and (b) NO . The filling pulse duration is 20 ms to achieve saturation of the signal and the rate window is 8.6 ms. The constant capacitance is 42 pF and the filling pulse voltage is 13 V for the AO and 18 pF and 5 V for the NO sample.

Image of FIG. 5.
FIG. 5.

Double-CCDLTS scans for (a) the AO sample and (b) the NO sample at the filling voltages indicated. Scans for the latter are offset vertically. The constant capacitance was 42 pF for the AO sample and 18 pF for the NO sample. The filling pulse duration is 20 ms, and the rate window is 8.6 ms.

Image of FIG. 6.
FIG. 6.

Arrhenius plots: (a) representative data from double-CCDLTS scans for the AO sample with filling pulse voltages 7.0/6.0, 10.0/9.0, and 13.0/12.0 V at constant capacitance 42 pF and (b) double-CCDLTS data for the NO sample with pulse voltages 3.5/3.0 and 5.0/4.5 V at constant capacitance 18 pF and CCDLTS data (open symbols) with filling pulse voltage 5 V.

Image of FIG. 7.
FIG. 7.

Capture cross section and emission activation energy determined from double-CCDLTS (solid symbols) and CCDLTS (open symbols) measurements for the AO (squares) and the NO (triangles) samples. The uncertainty in the activation energy is 0.02 eV and it is an order of magnitude in the capture cross section.

Image of FIG. 8.
FIG. 8.

Distribution of interface states obtained from CCDLTS and high-low measurements on AO and NO samples.

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/content/aip/journal/jap/103/3/10.1063/1.2837028
2008-02-05
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/3/10.1063/1.2837028
10.1063/1.2837028
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