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Reactivity and morphology of vapor-deposited Al/polymer interfaces for organic semiconductor devices
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View: Figures


Image of FIG. 1.
FIG. 1.

UPS valence band spectra of MEH-PPV (on Au) at different Al deposition times.

Image of FIG. 2.
FIG. 2.

(a) XPS C spectra of MEH-PPV at different Al deposition steps. (b) Peak area and (c) percentage peak area for C–O, C–C, and C– signals.

Image of FIG. 3.
FIG. 3.

(a) XPS Al spectra at different Al deposition steps on MEH-PPV. (b) Angle-resolved XPS analysis of Al on MEH-PPV (after 13 min of Al deposition).

Image of FIG. 4.
FIG. 4.

(a) XPS elemental depth profile analysis and (b) Al spectrum at various sputtering intervals.

Image of FIG. 5.
FIG. 5.

Survey spectrum of PS (a) and PS-O3 (b) at various Al deposition steps.

Image of FIG. 6.
FIG. 6.

Decay of peak area of PS, PS-O3, and MEH-PPV during Al evaporation.

Image of FIG. 7.
FIG. 7.

(a) Al spectra for PS and PS-O3 samples. (b) C spectrum for PS-O3 at different Al deposition steps.

Image of FIG. 8.
FIG. 8.

SEM images of Al deposited MEH-PPV samples (a) at and (b) at magnification. Evaporation was carried out inside the XPS side chamber.

Image of FIG. 9.
FIG. 9.

AFM scanning images of (a) pristine PS and (b) PS after 30 min Al evaporation. Each division in the - and -axes corresponds to . Each division in the -axis corresponds to 30 nm.

Image of FIG. 10.
FIG. 10.

FIB images of the surface of Al deposited PS surface at different magnifications (a), (b), (c). Cross-sectional FIB analysis of Al deposited PS (d) and MEH-PPV (e) samples.

Image of FIG. 11.
FIG. 11.

Schematic drawings representing possible morphology of the metal/semiconductor interface for a (a) reactive polymer and (b) considerably inert polymer surface.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reactivity and morphology of vapor-deposited Al/polymer interfaces for organic semiconductor devices