sample surface root-mean-square roughness measured by atomic force microscopy (AFM) as a function of the etch time in 1:200 aqueous HF solution.
Deconvoluted SRPES Ga and As spectra of the GaAs surface with (a) HCl cleaned, (b)HCl passivated, and (c) HCl in situ vacuum anneal.
(a) Evolution of the Ga core level SRPES spectra as a function of wet-etching time on the as deposited stack taken at a photon energy of . Deconvoluted interfacial core level SRPES spectra of (b) Ga and (c) As taken after of HF etching.
Evolution of the (a) Ga , (b) As , and (c) S core level SRPES spectra as a function of wet-etching time for the annealed stack taken at a photon energy of .
Deconvoluted interfacial core level SRPES spectra of (a) Ga and (b) As taken after of HF etching on the annealed stack. (c) As SRPES spectrum for the out-diffused arsenic taken after of HF etching.
The cross section high resolution transmission electron microscopy (HRTEM) images of the annealed (a) /native oxide/GaAs stack and (b) stack.
(a) SRPES spectra for the 1:200 HF-etched aligned from a clean bulk GaAs. (b) Calibrated valence-band photoemission spectra and deduced valence-band offset.
Energy-band diagram of structure inferred from the SRPES measurements.
Fitting parameters for the Ga , As , and Hf core level spectra. All energy are in eV.
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