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gate dielectric on passivated (100) GaAs grown by atomic layer deposition
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10.1063/1.2838471
/content/aip/journal/jap/103/3/10.1063/1.2838471
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/3/10.1063/1.2838471

Figures

Image of FIG. 1.
FIG. 1.

sample surface root-mean-square roughness measured by atomic force microscopy (AFM) as a function of the etch time in 1:200 aqueous HF solution.

Image of FIG. 2.
FIG. 2.

Deconvoluted SRPES Ga and As spectra of the GaAs surface with (a) HCl cleaned, (b)HCl passivated, and (c) HCl in situ vacuum anneal.

Image of FIG. 3.
FIG. 3.

(a) Evolution of the Ga core level SRPES spectra as a function of wet-etching time on the as deposited stack taken at a photon energy of . Deconvoluted interfacial core level SRPES spectra of (b) Ga and (c) As taken after of HF etching.

Image of FIG. 4.
FIG. 4.

Evolution of the (a) Ga , (b) As , and (c) S core level SRPES spectra as a function of wet-etching time for the annealed stack taken at a photon energy of .

Image of FIG. 5.
FIG. 5.

Deconvoluted interfacial core level SRPES spectra of (a) Ga and (b) As taken after of HF etching on the annealed stack. (c) As SRPES spectrum for the out-diffused arsenic taken after of HF etching.

Image of FIG. 6.
FIG. 6.

The cross section high resolution transmission electron microscopy (HRTEM) images of the annealed (a) /native oxide/GaAs stack and (b) stack.

Image of FIG. 7.
FIG. 7.

(a) SRPES spectra for the 1:200 HF-etched aligned from a clean bulk GaAs. (b) Calibrated valence-band photoemission spectra and deduced valence-band offset.

Image of FIG. 8.
FIG. 8.

Energy-band diagram of structure inferred from the SRPES measurements.

Tables

Generic image for table
Table I.

Fitting parameters for the Ga , As , and Hf core level spectra. All energy are in eV.

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/content/aip/journal/jap/103/3/10.1063/1.2838471
2008-02-07
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: HfO2 gate dielectric on (NH4)2S passivated (100) GaAs grown by atomic layer deposition
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/3/10.1063/1.2838471
10.1063/1.2838471
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