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Electro-optic nature of ultrafast pump-probe reflectivity response from multilayer semiconductor heterostructures
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10.1063/1.2840139
/content/aip/journal/jap/103/4/10.1063/1.2840139
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/4/10.1063/1.2840139
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The TRC and TEFISHGC signals from the heterostructure (Ga–As interface type) measured at with . (b) The schematic band alignment of the heterostructure.

Image of FIG. 2.
FIG. 2.

The TRC signals from the heterostructure with the In–Sb interface-type measured at and at the photon energy indicated.

Image of FIG. 3.
FIG. 3.

The TRC signals from the heterostructure with the Ga–As interface type measured at and at the photon energy indicated (left column). The right column shows the differences of the corresponding TRC traces and that measured with .

Image of FIG. 4.
FIG. 4.

The TRC signal from the heterostructure with the In–Sb interface type measured at with . The fit to the data is shown in red. The fit components are shown in blue. The contributions from the linear-in-field and quadratic-in-field electro-optic effects are patterned in different directions. The inset presents the same traces in the short-time-delay range for a better observation.

Image of FIG. 5.
FIG. 5.

The difference of the TRC signal from the heterostructure with the Ga–As interface type measured at with and . The fit to the data is shown in red. The fit components are shown in blue. The inset presents the same traces in the short-time-delay range for a better observation.

Image of FIG. 6.
FIG. 6.

The photon energy dependences of the ratio of the TRC intensities for the heterostructures with In–Sb and Ga–As interface types taken at indicated time delays. The vertical straight lines indicate the position of for GaAs and the LO-phonon energy for GaSb counted from for GaAs.

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/content/aip/journal/jap/103/4/10.1063/1.2840139
2008-02-25
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electro-optic nature of ultrafast pump-probe reflectivity response from multilayer semiconductor heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/4/10.1063/1.2840139
10.1063/1.2840139
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