Pre- and post-NBTS DC-IV measurements on (a) pMOSFET ( at for ) and (b) PNO pMOSFET ( at for ).
Optimized SDR traces of NBTI-induced defects in and PNO-based devices as a function of -value. NBTI generates different defects in and PNO devices.
(a) Adapted (Ref. 43) ESR -value angular dependence for the interfacial defect and (b) SDR -value angular dependence for the NBTI-induced PNO defect. The PNO defect’s isotropic -value is an indication that the defect is physically located in the “near-interface” region. In each case, is the angle between the ⟨100⟩ interface normal and the applied magnetic field. The devices are rotated about the ⟨011⟩ direction.
SDT and SDR spectra of PNO defect. Both measurements clearly show the generation of a single dominating signal at . The spectrometer gain is 100 times greater for the spectrum.
(a) Normalized size of the SDR and SDT effects for the PNO defect as a function of . The normalization is plotted as the modification to the SDR/SDT current divided by the DC source/drain to substrate diode current (b) The modification to the SDR/SDT current as a function of . These figures illustrate that the PNO defect clearly participates in both SDT and SDR phenomena.
Normalized size of the SDR and SDT effects as a function of for and .
DC substrate currents and modifications to the spin-dependent currents for SDT with [(a) and (b)] and for SDR with [(c) and (d)]. The close correspondence between the peaks in the substrate currents and values is an indication that the PNO defect dominates both the device tunneling centers [(a) and (b)] and interfaces states [(c) and (d)].
Normalized size of the SDR effect as a function of for the and PNO devices. The different responses indicate different densities of states.
Simulated DC-IV recombination current as a function of for (a) device with a flat density of states through the gap and (b) PNO device with a very narrow density of states centered about the middle of the gap. The figure insets show the simulated densities of states in each case.
DC-IV derived average values over the energy window for the (a) and (b) PNO devices as a function of source/drain to substrate diode forward bias . The values were obtained from DC-IV measurements and Eq. (1). As , and the recombination energy window, increases, for the device is essentially constant while for the PNO device decreases. This is consistent with the PNO defect having a narrowly peaked density of states.
Schematic representation of the (a) and interface defect densities of states and (b) the effective density of states illustrating the relatively flat distribution near the middle of the band gap. (c) illustrates a schematic representation of the PNO defect’s density of states near the middle of the band gap.
Wide scan SDT spectra of the PNO defect. Increased spectrometer gain and extensive signal averaging reveals two hyperfine side peaks.
Measured magnetic resonance parameters of important silicon dangling bond defects. The center and center parameters are nearly the same.
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