Wafer pattern designs used in this study.
Impact of HCl partial pressure on growth rate and Ge composition of the selectively deposited for reference and device openings.
Impact of growth pressure on the growth rate for different Si coverages.
Effect of Si coverage on growth rate and Ge composition of the selectively deposited .
Growth rate variation of device openings in various directions from a reference opening. The deposition was performed without rotation.
AFM amplitude micrograph illustrating the polycrystalline stripe around a device opening.
Effect of polycrystalline Si barriers at varying distance from the device openings on (a) growth rate and (b) Ge content. Dotted lines indicate growth rate and Ge amount on blanket reference wafers.
AFM cross-section images of the edge of the epitaxial layers with polystripes at varying distances.
Growth rate dependence of boron-doped SiGe layers vs chip Si coverage for various and partial pressures.
Substitutional boron incorporation vs chip Si coverage.
characteristics of SOI UTB devices with elevated in situ B-doped SiGe source/drains.
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