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Pattern dependency in selective epitaxy of B-doped SiGe layers for advanced metal oxide semiconductor field effect transistors
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10.1063/1.2832631
/content/aip/journal/jap/103/5/10.1063/1.2832631
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/5/10.1063/1.2832631
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Wafer pattern designs used in this study.

Image of FIG. 2.
FIG. 2.

Impact of HCl partial pressure on growth rate and Ge composition of the selectively deposited for reference and device openings.

Image of FIG. 3.
FIG. 3.

Impact of growth pressure on the growth rate for different Si coverages.

Image of FIG. 4.
FIG. 4.

Effect of Si coverage on growth rate and Ge composition of the selectively deposited .

Image of FIG. 5.
FIG. 5.

Growth rate variation of device openings in various directions from a reference opening. The deposition was performed without rotation.

Image of FIG. 6.
FIG. 6.

AFM amplitude micrograph illustrating the polycrystalline stripe around a device opening.

Image of FIG. 7.
FIG. 7.

Effect of polycrystalline Si barriers at varying distance from the device openings on (a) growth rate and (b) Ge content. Dotted lines indicate growth rate and Ge amount on blanket reference wafers.

Image of FIG. 8.
FIG. 8.

AFM cross-section images of the edge of the epitaxial layers with polystripes at varying distances.

Image of FIG. 9.
FIG. 9.

Growth rate dependence of boron-doped SiGe layers vs chip Si coverage for various and partial pressures.

Image of FIG. 10.
FIG. 10.

Substitutional boron incorporation vs chip Si coverage.

Image of FIG. 11.
FIG. 11.

characteristics of SOI UTB devices with elevated in situ B-doped SiGe source/drains.

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/content/aip/journal/jap/103/5/10.1063/1.2832631
2008-03-11
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Pattern dependency in selective epitaxy of B-doped SiGe layers for advanced metal oxide semiconductor field effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/5/10.1063/1.2832631
10.1063/1.2832631
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