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Interface engineering for high interfacial strength between SiCOH and porous SiCOH interconnect dielectrics and diffusion caps
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10.1063/1.2844483
/content/aip/journal/jap/103/5/10.1063/1.2844483
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/5/10.1063/1.2844483

Figures

Image of FIG. 1.
FIG. 1.

(a) Structure used for the four point bending test. (b) The types of failure occurring during the four point bending test.

Image of FIG. 2.
FIG. 2.

Composition profiles of locus of failure of for SiCOH deposited on unmodified SiCNH surface: TOF-SIMS of SiCNH side. (The spike in the SiN trace which occurs at the interface between the SiCNH layer and the Si substrate is caused by a higher secondary ion yield efficiency of the SiN ion when it is in a Si-rich environment of the Si wafer. Nitrogen gets pushed into the wafer during the depth profiling by a process called “knock on.”)

Image of FIG. 3.
FIG. 3.

Composition profiles of locus of failure of for SiCOH deposited on oxidized SiCNH surface: TOF-SIMS of SiCNH side.

Image of FIG. 4.
FIG. 4.

TEM characterization of interface. [(a) and (b)] Transmission micrographs through FIB specimens; [(c) and (d)] intensity profiles across the structures in (a) and (b). (b) and (d) correspond to a untreated stack and (a) and (c) correspond to a similar stack where the surface of SiCNH has been preoxidized (TEM by Gignac and Rullan).

Image of FIG. 5.
FIG. 5.

Diagram of PECVD processing flow and the effects on carbon distribution in SiCOH.

Image of FIG. 6.
FIG. 6.

TOF-SIMS profile of optimized stack with graded transition layer.

Image of FIG. 7.
FIG. 7.

Composition profiles of locus of failure of SiCOH on SiCNH with graded layer (TOF-SIMS of SiCNH side). Trace of SiCOH is observed on the delaminated SiCNH surface.

Image of FIG. 8.
FIG. 8.

TOF-SIMS of locus of failure of SiCNH/pSiCOH stack with graded transition layer (SiCNH side). The optimized interfacial strength of this structure was .

Tables

Generic image for table
Table I.

Improvement of interfacial strength to SiCNH for different SiCOH films. The number in parentheses is the one-sigma error of measurements.

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/content/aip/journal/jap/103/5/10.1063/1.2844483
2008-03-07
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interface engineering for high interfacial strength between SiCOH and porous SiCOH interconnect dielectrics and diffusion caps
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/5/10.1063/1.2844483
10.1063/1.2844483
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