(a) Structure used for the four point bending test. (b) The types of failure occurring during the four point bending test.
Composition profiles of locus of failure of for SiCOH deposited on unmodified SiCNH surface: TOF-SIMS of SiCNH side. (The spike in the SiN trace which occurs at the interface between the SiCNH layer and the Si substrate is caused by a higher secondary ion yield efficiency of the SiN ion when it is in a Si-rich environment of the Si wafer. Nitrogen gets pushed into the wafer during the depth profiling by a process called “knock on.”)
Composition profiles of locus of failure of for SiCOH deposited on oxidized SiCNH surface: TOF-SIMS of SiCNH side.
TEM characterization of interface. [(a) and (b)] Transmission micrographs through FIB specimens; [(c) and (d)] intensity profiles across the structures in (a) and (b). (b) and (d) correspond to a untreated stack and (a) and (c) correspond to a similar stack where the surface of SiCNH has been preoxidized (TEM by Gignac and Rullan).
Diagram of PECVD processing flow and the effects on carbon distribution in SiCOH.
TOF-SIMS profile of optimized stack with graded transition layer.
Composition profiles of locus of failure of SiCOH on SiCNH with graded layer (TOF-SIMS of SiCNH side). Trace of SiCOH is observed on the delaminated SiCNH surface.
TOF-SIMS of locus of failure of SiCNH/pSiCOH stack with graded transition layer (SiCNH side). The optimized interfacial strength of this structure was .
Improvement of interfacial strength to SiCNH for different SiCOH films. The number in parentheses is the one-sigma error of measurements.
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