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Effect of electron distribution in InN films on infrared reflectance spectrum of longitudinal optical phonon-plasmon interaction region
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10.1063/1.2875918
/content/aip/journal/jap/103/5/10.1063/1.2875918
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/5/10.1063/1.2875918

Figures

Image of FIG. 1.
FIG. 1.

Atomic force microscopy images. [(a) and (b)] E848 and [(c) and (d)] E695. The surface roughness of the root mean square for square region [(a) or (c)] is for E848 and for E695.

Image of FIG. 2.
FIG. 2.

Calculated reflectance spectra of substrate with and without thick InN on its surface. The sheet electron density of the InN layer is . The plasmon broadening factor is varied from with a condition of and . Thick solid curve: . Dashed curve: . Dotted curve: . Thin solid curve: without InN.

Image of FIG. 3.
FIG. 3.

Dependence of IR reflectance spectra of structure on electron density and InN film thickness. Dotted curves are calculated spectra for uniform electron distribution in InN films. Solid and dashed curves are calculated spectra with the use of model I and model II, respectively.

Image of FIG. 4.
FIG. 4.

Inverse of the absorption coefficient (a) and schematic drawing of the optical reflection behavior at the surface and interface (b). Absorption coefficient was calculated for model I of E848. The thickness of the arrows symbolically represents the light intensity.

Image of FIG. 5.
FIG. 5.

Calculated reflectance spectra for models I, II and III. (a) Model I of IA structure, (b) model II of SA structure, (c) and model III of GA structure. The bulk regions in (a) and (b) have of . The curves in (a) are for sheet electron density of 0, 1, 2, and 5 in the unit of for IA. The curves in (b) are for 0, 1, 2, and 5 in the unit of for SA. For GA the total sheet electron density of the InN film and are kept constant as and 0.02. Sheet electron densities of the accumulation region are 0, 2, 4, and 6 in the unit of . These electrons are supposed to be localized in the roll shape regions indicated by the gray areas in the inset.

Image of FIG. 6.
FIG. 6.

IR reflectance spectra of E839 at . (a) The spectra in the range of . (b) The magnified spectra for the region.

Image of FIG. 7.
FIG. 7.

IR reflectance spectra of E848 at . (a) The spectra in the range of . (b) The magnified spectra for the region.

Image of FIG. 8.
FIG. 8.

Mean deviation of the fitted spectra from the experimental plots for E848: and for the model of a single InN layer with a uniform electron distribution.

Image of FIG. 9.
FIG. 9.

Reflectance spectra of E856, E626, E747, and E312 at . The dashed curves are the spectra for the model without accumulation structures. The solid curves are the spectra for model I.

Image of FIG. 10.
FIG. 10.

Reflectance spectra of E695 at . (a) The spectra in . (b) The magnified spectra for the region.

Tables

Generic image for table
Table I.

Layer thickness and characteristic properties of samples.

Generic image for table
Table II.

Mean deviations of the best-fit functions from experimental plots. For E839 upper and lower lines indicate the single bulk region in model I and the dual bulk region, respectively.

Generic image for table
Table III.

Adjusted parameters for LO phonon-plasmon system. For E839 the upper and lower lines correspond to the model with and without the two-bulk layer structure, respectively. For E312 the parameters for uniform electron distribution are listed.

Generic image for table
Table IV.

Minimum and and the corresponding parameters for E848. The listed values of are for the bulk regions. The sheet electron densities in the accumulation regions are (I), (II), of GA (III), and of IA and of GA (IV)

Generic image for table
Table V.

Minimum and and the corresponding parameters for E695. The listed values of are for the bulk regions. The sheet electron densities in the accumulation regions are (I), (II), in GA (III), and of IA and of GA (IV)

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/content/aip/journal/jap/103/5/10.1063/1.2875918
2008-03-13
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of electron distribution in InN films on infrared reflectance spectrum of longitudinal optical phonon-plasmon interaction region
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/5/10.1063/1.2875918
10.1063/1.2875918
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