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High-resolution observations of an amorphous layer and subsurface damage formed by femtosecond laser irradiation of silicon
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10.1063/1.2885111
/content/aip/journal/jap/103/5/10.1063/1.2885111
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/5/10.1063/1.2885111

Figures

Image of FIG. 1.
FIG. 1.

Plan-view Nomarski light micrographs of silicon irradiated by femtosecond laser pulses. (a) Single pulse with fluence of . (b) Single pulse with fluence of . (c) Single pulse with fluence of , with similar conditions as those for the specimen shown in (b). (d) Single pulse with fluence of . (e) Five pulses, each with a fluence of .

Image of FIG. 2.
FIG. 2.

Cross-sectional bright-field TEM image of the FIB specimen prepared from Fig. 1(a) (single pulse, fluence of ). The crater is very shallow ( deep) and bend contours are visible in the crystalline silicon.

Image of FIG. 3.
FIG. 3.

TEM images of the specimen shown in Fig. 1(b) (single pulse, fluence of ). (a) Bright-field image of the overall cross section. (b) Bright-field image of the rim part indicated by the rectangle in (a).

Image of FIG. 4.
FIG. 4.

TEM images of the specimen shown in Fig. 1(c) (single pulse, fluence of ). (a) STEM bright-field image of the overall cross section. (b) STEM bright-field image of the rim part, exhibiting diffraction contrast. Two arrows indicate positions where EDXS spectra were taken (see Fig. 5). The HREM image in Fig. 6 was taken near the location indicated by “EDXS .” (c) HAADF image (exhibiting atomic number contrast) of the area shown in (b).

Image of FIG. 5.
FIG. 5.

EDXS spectra of the specimen shown in Figs. 1(c) and 4 (single pulse, fluence of ), with analyzed positions indicated in Fig. 4(b). (a) Spectrum of the inner region. (b) Spectrum of the surface region. Only silicon peaks can be seen except for copper peaks (which came from the sample mount) and zero strobe reference peaks at .

Image of FIG. 6.
FIG. 6.

HREM image of the rim part shown in Fig. 4 (single pulse, fluence of ). Amorphous silicon is present between the crystalline substrate and the FIB preparation coating.

Image of FIG. 7.
FIG. 7.

TEM images of the specimen shown in Fig. 1(e) (five pulses, fluence of ). (a) Bright-field STEM image of the overall cross section. (b) Bright-field STEM image of the rim part. Two arrows indicate positions where EDXS spectra and NBD were taken (see Fig. 8), while the circle indicates the location of the HREM image (see Fig. 9). (c) HAADF image of the area shown in (b).

Image of FIG. 8.
FIG. 8.

EDXS spectra and (inset) NBD patterns from the specimen shown in Figs. 1(e) and 7 (five pulses, fluence of ), with analyzed positions indicated in Fig. 7(b). (a) Spectrum and diffraction pattern from the inner unmodified region. (b) Spectrum and diffraction pattern of the laser-modified surface region. Only silicon peaks can be seen in the spectra except for copper peaks (from the sample mount) and zero strobe reference peaks at .

Image of FIG. 9.
FIG. 9.

HREM image of the amorphous part shown in Figs. 1(e) and 7 (five pulses, fluence of ). The location of the HREM site is indicated in Fig. 7(b).

Image of FIG. 10.
FIG. 10.

Cross-sectional bright-field TEM image of the specimen irradiated by a single high-fluence pulse, shown in Fig. 1(d).

Image of FIG. 11.
FIG. 11.

Cross-sectional bright-field TEM image of the specimen irradiated by four laser pulses (fluence of each).

Tables

Generic image for table
Table I.

Table of laser irradiation conditions, TEM, and EDXS results of specimens in this study. Pulse energies have an uncertainty of approximately and fluences have an uncertainty of approximately .

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/content/aip/journal/jap/103/5/10.1063/1.2885111
2008-03-06
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-resolution observations of an amorphous layer and subsurface damage formed by femtosecond laser irradiation of silicon
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/5/10.1063/1.2885111
10.1063/1.2885111
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