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Impact of mechanical stress on gate tunneling currents of germanium and silicon -type metal-oxide-semiconductor field-effect transistors and metal gate work function
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10.1063/1.2838234
/content/aip/journal/jap/103/6/10.1063/1.2838234
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/6/10.1063/1.2838234
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/content/aip/journal/jap/103/6/10.1063/1.2838234
2008-03-24
2014-09-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of mechanical stress on gate tunneling currents of germanium and silicon p-type metal-oxide-semiconductor field-effect transistors and metal gate work function
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/6/10.1063/1.2838234
10.1063/1.2838234
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