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Formation of grown-in defects in molecular beam epitaxial Ga(In)NP: Effects of growth conditions and postgrowth treatments
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10.1063/1.2895379
/content/aip/journal/jap/103/6/10.1063/1.2895379
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/6/10.1063/1.2895379

Figures

Image of FIG. 1.
FIG. 1.

Typical PL spectra measured at from the first series of the GaNP samples, grown with and without ion collector (the upper panel) and with varying flow (the lower panel). They are shown in both visible (VIS) and NIR spectral range. The spectra are not calibrated by the instrument response. The features around 1.03 and are due to the optical response of the grating.

Image of FIG. 2.
FIG. 2.

Typical PL spectra measured at from the second (the middle and lowest panels) and third series (the upper most panel) of the Ga(In)NP samples, with and without postgrowth RTA treatment. They are shown in both visible and NIR spectral range. The spectra are not calibrated by the instrument response. The features around 1.03 and are due to the optical response of the grating.

Image of FIG. 3.
FIG. 3.

ODMR spectra from the first series of the GaNP samples with the optical excitation above the GaP band gap, by detecting the NIR (a) and VIS (b) PLs. The magnetic field is parallel to the [111] direction. The ODMR spectrum from the GaP substrate is shown as the lowest curve. In the upper part, the simulated ODMR spectra of the S1 and defect are also displayed using the spin Hamiltonian parameters given in Table II.

Image of FIG. 4.
FIG. 4.

ODMR spectra from the second series of the Ga(In)NP samples with , by detecting the NIR (a) and VIS (b) PLs. The ODMR spectrum from the GaP substrate is shown as the lowest curve. In the upper part, the simulated ODMR spectra of the S2 and defect are also displayed using the spin Hamiltonian parameters given in Table II.

Image of FIG. 5.
FIG. 5.

Typical ODMR spectra from the third series of samples, i.e. the MQW, measured with by detecting the NIR (a) and VIS (b) PLs. In the upper part, the simulated ODMR spectra of the S2 and defect are also displayed using the spin Hamiltonian parameters given in Table II. The ODMR spectrum from the GaP substrate is shown as the lowest curve.

Image of FIG. 6.
FIG. 6.

SIMS results from two (sample Nos. 21 and 22) of the first series of the GaNP samples, showing concentrations of nitrogen as well as that of common residual impurities of hydrogen, carbon, and oxygen as a function of depth from the surface. The region with a high N concentration corresponds to the -thick GaNP epilayers.

Image of FIG. 7.
FIG. 7.

The visible PL (VIS PL) intensity as a function of the ODMR signal intensity from the defect monitored via the VIS PL, measured at from the investigated samples. The observed anticorrelation demonstrates the role of the defect in competing carrier recombination. The symbols represent experimental data, and the lines are just a guide to the eye.

Tables

Generic image for table
Table I.

List of the Ga(In)NP samples studied in this work, grouped into three series, with the main growth parameters and the strain of the epilayers. The positive and negative sign of represents compressive and tensile strain, respectively.

Generic image for table
Table II.

The spin Hamiltonian parameters obtained from the best fit to the experimental ODMR results.

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/content/aip/journal/jap/103/6/10.1063/1.2895379
2008-03-26
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of grown-in defects in molecular beam epitaxial Ga(In)NP: Effects of growth conditions and postgrowth treatments
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/6/10.1063/1.2895379
10.1063/1.2895379
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