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Electrical transport properties of a nanorod GaN homojunction grown by molecular-beam epitaxy
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10.1063/1.2896636
/content/aip/journal/jap/103/6/10.1063/1.2896636
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/6/10.1063/1.2896636
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The temperature-dependent characteristic curve of a junction GaN nanorod diode. (a) The low temperature range from . (b) The high temperature range above . The inset shows the logarithmic current vs the forward bias voltage.

Image of FIG. 2.
FIG. 2.

The variation of the ideality factor as a function of temperature. The inset shows the ideality factor as a function of the inverse temperature.

Image of FIG. 3.
FIG. 3.

Resistance as a function of inverse temperature near the zero bias voltage for the junction diode.

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/content/aip/journal/jap/103/6/10.1063/1.2896636
2008-03-26
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical transport properties of a nanorod GaN p-n homojunction grown by molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/6/10.1063/1.2896636
10.1063/1.2896636
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