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Atomic structure of a tunnel junction. Arrows show displacements of Ti atoms with respect to O atoms within each monolayer for (a) paraelectric (PE) and (b) ferroelectric (FE) .
Local DOS in a tunnel junction as a function of energy. The and Ti DOS in the middle monolayer are shown by the shaded area. The polarization is assumed to be pointing to the right, as in Fig. 1(b).
Majority-(left) and minority-spin (right) probability densities for the state at with the lowest decay rate for paraelectric (top) and ferroelectric (bottom) states of a MFTJ at the Fermi energy. The results are obtained using VASP for a barrier layer. Within is displayed on Ti atoms.
Calculated conductance ( in units of ), spin polarization (SP), change in conductance , and tunneling magnetoresistance (TMR) in MFTJ for is in a paraelectric (PE) and a ferroelectric (FE) state. Quantities are defined as follows: , , and .
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