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Temperature and angular dependences of dynamic spin-polarized resonant tunneling in junctions
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Bias dependence of the experimental differential magnetoresistance of MTJs at (thin blue line) and (red squares), along with a thermal smearing fit of the data (thick black line). (b) The first (green squares) and second (black triangles) positive bias zero crossings were independent of temperature. (c) Temperature dependence of the zero-bias resistance in the parallel (green squares) and antiparallel (black triangles) states normalized to the room temperature value for each state. Lines are linear fits to the data in both (b) and (c).

Image of FIG. 2.
FIG. 2.

(a) Bias dependence of differential resistance in MTJs at for several representative applied field angles. The changed systematically from the antiparallel state (top curve, blue) to the parallel state (bottom curve, red) as the magnetic orientation was changed between these states using the applied in-plane field. (b) Bias dependence of the differential junction magnetoresistance obtained from the data in (a) via Eq. (1). (Inset) The first (squares) and second (triangles) zero crossings ( and , indicated by the arrows) were independent of angle.

Image of FIG. 3.
FIG. 3.

Model calculations of the bias dependence of the normalized differential junction magnetoresistance for several applied field angles qualitatively reproduce the experimental of Fig. 2(b). The field angle was simulated by varying the polarization of one electrode as in 30° steps. The antiparallel state is the top curve (blue), and the parallel state is the horizontal (red) curve where is zero. (Inset) The first and second positive bias zero crossings were independent of angle.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature and angular dependences of dynamic spin-polarized resonant tunneling in CoFeB∕MgO∕NiFe junctions