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Analysis of the off current in nanocrystalline silicon bottom-gate thin-film transistors
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10.1063/1.2902499
/content/aip/journal/jap/103/7/10.1063/1.2902499
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/7/10.1063/1.2902499

Figures

Image of FIG. 1.
FIG. 1.

Cross section of the trilayer inverted-staggered TFT structure, (a) single nc-Si channel layer in TFT A, and (b) nc-Si capped with in TFT B.

Image of FIG. 2.
FIG. 2.

Transfer characteristics of TFT A with an all nc-Si channel layer with thickness of . The aspect ratio . Dots: experimental, lines: computation.

Image of FIG. 3.
FIG. 3.

Transfer characteristics of TFT B with nc-Si channel layer capped with . The aspect ratio . Dots: experimental, lines: computation.

Image of FIG. 4.
FIG. 4.

Drain-source current of TFT A, measured in the range of at a drain voltage of , and different gate voltages indicated in steps. The effective activation energy is also shown.

Image of FIG. 5.
FIG. 5.

Drain-source current of TFT B, measured in the range of at a drain voltage of , and different gate voltages indicated in steps. The effective activation energy is also shown.

Image of FIG. 6.
FIG. 6.

Transfer characteristics computed at a drain voltage of , when the density of fixed charges at the gate dielectric interface and at the passivation nitride interface vary from in steps of . The structure is similar to TFT A.

Image of FIG. 7.
FIG. 7.

Computed band bending profile in the TFT channel layer, (a) and (b) . The solid and dash lines are for of 0 and , respectively. The structure is similar to TFT A. For simplicity, the and between the channel layer and nitrides are not shown.

Image of FIG. 8.
FIG. 8.

Profile of density of states in nc-Si. The intrinsic Fermi level and conduction band edge energies are at 0 and , respectively.

Image of FIG. 9.
FIG. 9.

Transfer characteristics of a TFT computed as a function of density of midgap defect states .

Image of FIG. 10.
FIG. 10.

Transfer characteristics computed as a function of the thickness. The is and the drain voltage is . The nc-Si layer is thick.

Image of FIG. 11.
FIG. 11.

Current density computed as a function of distance from the passivation nitride for a gate voltage of and a drain voltage of .

Image of FIG. 12.
FIG. 12.

Experimental transfer characteristics of a TFT whose channel layer comprises of nc-Si plus cap layer.

Tables

Generic image for table
Table I.

Summary of measurement and simulation parameters.

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/content/aip/journal/jap/103/7/10.1063/1.2902499
2008-04-02
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analysis of the off current in nanocrystalline silicon bottom-gate thin-film transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/7/10.1063/1.2902499
10.1063/1.2902499
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