Specular scans on the Pr oxide/Si(111) support system before (a) and after Ge deposition (b).
In-plane scans (; ) along the direction ( azimuth) on the Pr oxide/Si(111) support system before (a) and after Ge deposition (b).
In situ RHEED study of Ge growth on Pr oxide versus Ge deposition time. Long arrows indicate the position of the rod; in (h) the short arrows indicate the reconstruction of the Ge(111) surface.
Ge (a), O (b), and Pr (c) XPS spectra vs Ge evaporation time.
O (▴), Pr (●), and Ge (◼) intensities vs Ge deposition time for Pr oxide substrate (a), interface (b), Ge oxide (c), and elemental Ge film (d).
He I UPS spectra vs Ge evaporation time.
Scheme of the growth mechanism of Ge on the Pr oxide/Si(111) support system. Solid arrows indicate Ge evaporation on the sample surface; dashed arrows account for O diffusion from the Pr oxide to the growing Ge deposit.
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