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The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline support systems
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10.1063/1.2870270
/content/aip/journal/jap/103/8/10.1063/1.2870270
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/8/10.1063/1.2870270
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Specular scans on the Pr oxide/Si(111) support system before (a) and after Ge deposition (b).

Image of FIG. 2.
FIG. 2.

In-plane scans (; ) along the direction ( azimuth) on the Pr oxide/Si(111) support system before (a) and after Ge deposition (b).

Image of FIG. 3.
FIG. 3.

In situ RHEED study of Ge growth on Pr oxide versus Ge deposition time. Long arrows indicate the position of the rod; in (h) the short arrows indicate the reconstruction of the Ge(111) surface.

Image of FIG. 4.
FIG. 4.

Ge (a), O (b), and Pr (c) XPS spectra vs Ge evaporation time.

Image of FIG. 5.
FIG. 5.

O (▴), Pr (●), and Ge (◼) intensities vs Ge deposition time for Pr oxide substrate (a), interface (b), Ge oxide (c), and elemental Ge film (d).

Image of FIG. 6.
FIG. 6.

He I UPS spectra vs Ge evaporation time.

Image of FIG. 7.
FIG. 7.

Scheme of the growth mechanism of Ge on the Pr oxide/Si(111) support system. Solid arrows indicate Ge evaporation on the sample surface; dashed arrows account for O diffusion from the Pr oxide to the growing Ge deposit.

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/content/aip/journal/jap/103/8/10.1063/1.2870270
2008-04-23
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/8/10.1063/1.2870270
10.1063/1.2870270
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