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Injection-seeded internal-reflection-mode laser exceeds peak terahertz power
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View: Figures


Image of FIG. 1.
FIG. 1.

Coupled laser scheme for high power terahertz generation. The large slave laser operates on total reflection modes, which provides long round-trip path through the active crystal, required for high-power output. Collimated output of the radiation from the total internal reflection cavity is arranged through corner bevels. Similar bevels allow incoupling at the proper angle from the seed laser. The seed laser shown is a small independently excited laser with small copper output mirror to allow outcoupling around the edges and (as an example) an intracavity lamellar grating wavelength selector at the large copper back mirror.

Image of FIG. 2.
FIG. 2.

Spectrum of the slave laser operating on total internal reflection modes. The inset presents a schematic of the laser crystal with applied field vectors, showing operation on total internal reflection modes and nondirectional output coupling at the corners.

Image of FIG. 3.
FIG. 3.

Coupled laser emission recorded by a fast Ge:Ga photoconductor with (heavy trace) and without (light trace) injection seeding. The arrow indicates the beginning of the slave laser excitation, and the noise burst from electromagnetic interference persists while the slave laser excitation current ramps up to its optimum value.

Image of FIG. 4.
FIG. 4.

Effect of injection seeding on subthreshold slave laser. The arrow indicates the onset of slave laser excitation. The legend indicates the trigger advance of the seed laser excitation relative to that of the slave laser.

Image of FIG. 5.
FIG. 5.

Laser pulse energies of the seed and slave lasers separately and coupled, recorded by a Golay cell.

Image of FIG. 6.
FIG. 6.

Spectrum of slave laser emission with and without injection seeding. The latter spectrum is vertically shifted by for clarity.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Injection-seeded internal-reflection-mode p-Ge laser exceeds 10W peak terahertz power