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A highly tunable lateral quantum dot realized in InGaAs/InP by an etching technique
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10.1063/1.2905239
/content/aip/journal/jap/103/8/10.1063/1.2905239
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/8/10.1063/1.2905239
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) SEM image of a quantum dot defined in InGaAs/InP by etching trenches with six surrounding in-plane gates (forming three split gates) and measurement circuit setup. The local top gate and isolation layer was not fabricated when the image was taken. The position of the top gate in a measured device is schematically indicated by the dashed lines in the image. In the measurements, a bias voltage was applied in an antisymmetric configuration as indicated in the circuit setup. The source and drain currents were simultaneously measured in order to monitor gate leakage. (b) Schematic view of the cross section of the quantum dot structure. The dot is surrounded by cross-linked PMMA with a local gate on top.

Image of FIG. 2.
FIG. 2.

Current through the dot at a source-drain bias of measured (a) as a function of voltage applied to the middle in-plane split gate and (b) as a function of voltage applied to the local top gate . The inset in (b) shows a plot of the measured current as a function of the applied voltages and .

Image of FIG. 3.
FIG. 3.

Differential conductance given in a linear gray scale as a function of source-drain bias for (a) different voltages applied to the middle in-plane split gate and (b) different voltages applied to the top gate . The voltages at the left and right split gates were set at in these measurements.

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/content/aip/journal/jap/103/8/10.1063/1.2905239
2008-04-16
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A highly tunable lateral quantum dot realized in InGaAs/InP by an etching technique
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/8/10.1063/1.2905239
10.1063/1.2905239
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