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Effects of surface treatments using and on electrical properties and chemical structures of high- dielectric films on strained substrates
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10.1063/1.2907869
/content/aip/journal/jap/103/8/10.1063/1.2907869
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/8/10.1063/1.2907869

Figures

Image of FIG. 1.
FIG. 1.

(a) , Si and Ge ToF-SIMS depth profiles of the films grown on Si and substrates before and after PDA, (b) ToF-SIMS depth profiles of the as-deposited films grown on Si, and (c) Hf and Ge AES depth profiles of the films grown on substrates before and after PDA.

Image of FIG. 2.
FIG. 2.

(a) Variations in the CET of the films grown on the Si and substrates before and after PDA, as a function of the Ge content of the substrates, and (b) a schematic diagram for the interpretations

Image of FIG. 3.
FIG. 3.

Ge and ToF-SIMS depth profiles of films grown on substrates (a) without and with (b) POT and (c) PNT grown before and after PDA.

Image of FIG. 4.
FIG. 4.

Si and ToF-SIMS depth profiles of films grown on substrates (a) without and with (b) POT and (c) PNT grown before and after PDA.

Image of FIG. 5.
FIG. 5.

SiN ToF-SIMS depth profiles of the films grown on substrates with and without POT and PNT before and after PDA.

Image of FIG. 6.
FIG. 6.

O core level XP spectra with deconvolution results for (a) films grown on substrates without and with (b) POT and (c) PNT before and after PDA

Image of FIG. 7.
FIG. 7.

Si core level XP spectra for (a) films grown on substrates without and with (b) POT and (c) PNT before and after PDA

Image of FIG. 8.
FIG. 8.

Cross-sectional HRTEM micrographs of films grown on substrates with and without POT and PNT before and after PDA, respectively.

Image of FIG. 9.
FIG. 9.

Variation in the CET of (a) films grown on Si and substrates without and with (b) POT and (d) PNT before and after PDA as a function of the Ge content in the substrates, and (c) schematic diagram of CET changes in the films with POT.

Image of FIG. 10.
FIG. 10.

characteristics of the films grown on Si and substrates with and without POT and PNT before and after PDA

Image of FIG. 11.
FIG. 11.

Variations in (a) hysteresis and (b) of films grown on Si and substrates with and without POT and PNT before and after PDA as a function of the Ge content of the substrates.

Image of FIG. 12.
FIG. 12.

Leakage current density characteristics for films grown on Si and substrates with and without POT and PNT before and after PDA

Image of FIG. 13.
FIG. 13.

Plot of vs CET for films grown on Si and substrates with and without POT and PNT before and after PDA

Tables

Generic image for table
Table I.

Thicknesses of the various layers of the films on the substrate with and without the surface treatments before and after PDA estimated from the cross-sectional HRTEM micrographs. The estimated error range of the thickness values is .

Generic image for table
Table II.

Thicknesses of the various layers in the films on (, 0.3) substrates with and without the surface treatments in the as-deposited state estimated from the cross-sectional HRTEM micrographs. The estimated error range of the thickness values is .

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2008-04-24
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of surface treatments using O3 and NH3 on electrical properties and chemical structures of high-kHfO2 dielectric films on strained Si1−xGex∕Si substrates
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/8/10.1063/1.2907869
10.1063/1.2907869
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