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Effective passivation of porous silicon optical devices by thermal carbonization
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10.1063/1.2910459
/content/aip/journal/jap/103/8/10.1063/1.2910459
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/8/10.1063/1.2910459
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Refractive index of high-index (, low-porosity) and low-index (, high-porosity) porous silicon single layers, before and after TC treatment at 500 and .

Image of FIG. 2.
FIG. 2.

Reflectance spectra of a porous silicon Bragg reflector before thermal carbonization (solid line), and after (dashed line) and (dotted line) TC.

Image of FIG. 3.
FIG. 3.

Optical spectrum shift of porous silicon optical filters as a function of storage time in ambient air. The results are shown for untreated (solid line) and thermally carbonized samples at (dashed line) and (dotted line).

Image of FIG. 4.
FIG. 4.

Optical spectrum shift of porous silicon optical filters as a function of storage time in absolute ethanol. The results are shown for untreated (solid line) and thermally carbonized samples at (dashed line) and (dotted line).

Image of FIG. 5.
FIG. 5.

Reflectance spectrum of a porous silicon interference filter, right after thermal carbonization at (solid line), and after 6 months of storage in ethanol (dashed line).

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/content/aip/journal/jap/103/8/10.1063/1.2910459
2008-04-30
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effective passivation of porous silicon optical devices by thermal carbonization
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/8/10.1063/1.2910459
10.1063/1.2910459
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