(a) Schematic of the self-organized QD heterotructure used in FDTD simulations; (b) dependence of the differential reflection on the refractive index change in the QD layer for three QD heterostructures with different cap layers; (c) dependence of the differential reflection on the thickness of the cap layer for two QD heterostructures with different QD layers simulated by the FDTD technique and calculated by the theory of dielectric films.
Schematic structures of the QDs (a) undoped and (b) -doped studied in this paper.
Differential reflection spectra obtained by pump-probe reflection measurements at a pump power of for the bulk GaAs (solid curve), the undoped QDs (dashed curve), and the -doped QDs (dotted curve).
Simulation results for the dependence of the differential reflection on the thickness of the GaAs cap layer for the QD heterostructure whose structure is similar to those studied in this paper.
Differential reflection spectra measured at different pump powers for (a) the bulk GaAs, (b) the undoped QDs, and (c) the -doped QDs.
Injected carrier density dependence of the carrier capture time from the GaAs barrier into the InAs wetting layer and that from the InAs wetting layer into the InAs QDs in (a) the undoped and (b) the -doped QDs.
Schematic of the electron and hole energy levels in the conduction and valence bands together with the carrier distribution in them. (a) The undoped QDs; (b) the -doped QDs.
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