Representative x-ray diffraction diagram of a thin film ( radiation). The inset shows a rocking curve of the same sample (prepared in vacuum at 970 K).
scan in () plane of the film prepared in vacuum at 970 K. The same scan for the film substrate is shown for comparison. The inset illustrates the two-domain structure of the film (top view) with the in-plane crystallographic directions used for the epitaxial relation determination.
Cross-sectional TEM (a) and HRTEM (b) images of a film prepared in vacuum at 970 K.
Absorption spectrum near oxygen edge (a) and iron edge (b) for the thin film prepared in vacuum at 970 K.
Perpendicular lattice parameter (full circles) and FWHM (open circles) calculated from XRD data and plotted as a function of oxygen pressure during the film deposition at 970 K. The dashed line corresponds to the bulk lattice value from Ref. 3.
The dependence of the in-plane surface lattice parameter on the oxygen pressure during the deposition at 970 K. The presented lattice values were calculated using RHEED images of the films at room temperature taken along the direction. The insets show some of those RHEED images illustrating the relation between value and the surface crystalline quality. The dashed line corresponds to the bulk lattice value from Ref. 3.
Reciprocal space mapping close to the () reflections of film and substrate for a 200 nm thick film grown at 970 K in base pressure.
In-plane (full circles) and out-of-plane (open circles) lattices as functions of the substrate temperature during the deposition in . Bulk and values from Ref. 3 are shown for comparison.
Surface in-plane lattice parameter relaxation (from RHEED images taken along ) as a function of the film thickness for two samples prepared at different oxygen pressures and . Substrate and bulk parameters are shown by dashed lines for comparison.
Room temperature electrical conductivity of ilmenite films as a function of oxygen pressure.
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