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A phenomenological model for the reliability of GaAs based heterojunction bipolar transistors
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10.1063/1.2917069
/content/aip/journal/jap/103/9/10.1063/1.2917069
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/9/10.1063/1.2917069
/content/aip/journal/jap/103/9/10.1063/1.2917069
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/content/aip/journal/jap/103/9/10.1063/1.2917069
2008-05-08
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A phenomenological model for the reliability of GaAs based heterojunction bipolar transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/9/10.1063/1.2917069
10.1063/1.2917069
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