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A phenomenological model for the reliability of GaAs based heterojunction bipolar transistors
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10.1063/1.2917069
/content/aip/journal/jap/103/9/10.1063/1.2917069
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/9/10.1063/1.2917069
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The base current and the current gain as functions of the collector current for an AlGaAs HBT and an InGaP HBT at high currents. The emitter size of the transistors is .

Image of FIG. 2.
FIG. 2.

Calculated MTTF as a function of inverse temperature at different stress currents. The activation energy calculated from the curve with a stress current density of is also shown in the figure. It is a function of the stress temperature.

Image of FIG. 3.
FIG. 3.

Calculated MTTF as a function of the stress current at different temperatures. This figure shows that the factor, as seen from the slope of the curves, can change as the temperature changes.

Image of FIG. 4.
FIG. 4.

Arrhenius plot of MTTF vs . Dots are experimental data, lines are fitted curves using our model. The current densities used are 5.2, 11, and .

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/content/aip/journal/jap/103/9/10.1063/1.2917069
2008-05-08
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A phenomenological model for the reliability of GaAs based heterojunction bipolar transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/103/9/10.1063/1.2917069
10.1063/1.2917069
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