(a) Schematic structure of ambipolar pentacene top-contact FET. (b) Energy band diagrams of pentacene and work function of Ca, Al, and Au.
Output characteristics of ambipolar pentacene FET grown on a dielectric in (a) - and (b) -channel operations.
Transfer characteristics of and vs for ambipolar pentacene FET in - and -channel operations.
Comparison of capacitance-voltage characteristics for the ambipolar pentacene FETs with∕without a PMMA layer measured from the MIS configuration with a frequency of .
XRD patterns with radiation for the pentacene thin films grown on and PMMA-modified , and the inset is the enlarged first peak of XRD patterns.
AFM images of pentacene grown on the (a) PMMA and (b) surfaces. The inset shows the corresponding three-dimensional (3D) images.
Transfer characteristic of ambipolar pentacene FETs with different metal electrodes in (a) - and (b) -channel operations.
Transfer characteristics of complementary meta-oxide semiconductor (CMOS)-like ambipolar pentacene inverter (a) in the first and (b) third quadrants with their corresponding gains. The insets show the scheme of the inverter circuit.
Summary of parameters extracted from the ambipolar pentacene FETs using different metals as source and drain electrodes.
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