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Realization of ambipolar pentacene thin film transistors through dual interfacial engineering
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Image of FIG. 1.
FIG. 1.

(a) Schematic structure of ambipolar pentacene top-contact FET. (b) Energy band diagrams of pentacene and work function of Ca, Al, and Au.

Image of FIG. 2.
FIG. 2.

Output characteristics of ambipolar pentacene FET grown on a dielectric in (a) - and (b) -channel operations.

Image of FIG. 3.
FIG. 3.

Transfer characteristics of and vs for ambipolar pentacene FET in - and -channel operations.

Image of FIG. 4.
FIG. 4.

Comparison of capacitance-voltage characteristics for the ambipolar pentacene FETs with∕without a PMMA layer measured from the MIS configuration with a frequency of .

Image of FIG. 5.
FIG. 5.

XRD patterns with radiation for the pentacene thin films grown on and PMMA-modified , and the inset is the enlarged first peak of XRD patterns.

Image of FIG. 6.
FIG. 6.

AFM images of pentacene grown on the (a) PMMA and (b) surfaces. The inset shows the corresponding three-dimensional (3D) images.

Image of FIG. 7.
FIG. 7.

Transfer characteristic of ambipolar pentacene FETs with different metal electrodes in (a) - and (b) -channel operations.

Image of FIG. 8.
FIG. 8.

Transfer characteristics of complementary meta-oxide semiconductor (CMOS)-like ambipolar pentacene inverter (a) in the first and (b) third quadrants with their corresponding gains. The insets show the scheme of the inverter circuit.


Generic image for table
Table I.

Summary of parameters extracted from the ambipolar pentacene FETs using different metals as source and drain electrodes.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Realization of ambipolar pentacene thin film transistors through dual interfacial engineering