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Ultrahigh current-carrying capability in clean films
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View: Figures


Image of FIG. 1.
FIG. 1.

X-ray diffraction pattern on a film: (a) scan and (b) scan. The peaks from the SiC substrate in (a) are marked with “” and the unidentifiable peaks marked with “” are also from the substrate (judging from the narrow width).

Image of FIG. 2.
FIG. 2.

(a) Temperature dependence of resistivity of a -thick film on a SiC substrate with the magnification of the transition area shown in the inset. (b) The curves in the magnetic field perpendicular to the film plane, which increases from .

Image of FIG. 3.
FIG. 3.

characteristics of a -wide nanobridges on a -thick film on a SiC substrate. The inset is the SEM image of the narrow strip with a susceptor tilted by 52°.

Image of FIG. 4.
FIG. 4.

Temperature dependence of for the 350- and -wide narrow strips.

Image of FIG. 5.
FIG. 5.

Field dependence of along the direction of the axis at different temperatures derived from the magnetization measurement; the whole magnetization loops are shown in the inset.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrahigh current-carrying capability in clean MgB2 films