TEM measurement of a step etched in an oxide layer ( BHF). The bulk silicon has been etched during exposure to the BHF solution.
AFM image of a deep and wide nanochannels (left), and a section analysis showing the extremely smooth surface on the bottom of the same channel (right).
Typical still image of the filling process of the deep channels. The meniscus is located around the mark. The contrast has been slightly increased compared to the original microscope image.
Measured position of the moving meniscus as a function of for filling of 5, 11, 23, and deep nanochannels with DI water [at temperatures of 22.7, 22.2, 21.6, and , respectively].
The dimensionless correction factor for the measurements of Fig. 4. The deviation from the calculated value increases gradually for smaller channel heights and reaches for the channels. The red line indicates the effect of a solidified layer next to the channel walls with a thickness of or four monolayers.
Measured trench depths after etching of the spacer layer in 1% HF.
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