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Capillary filling of sub- nanochannels
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10.1063/1.2952053
/content/aip/journal/jap/104/1/10.1063/1.2952053
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/1/10.1063/1.2952053

Figures

Image of FIG. 1.
FIG. 1.

TEM measurement of a step etched in an oxide layer ( BHF). The bulk silicon has been etched during exposure to the BHF solution.

Image of FIG. 2.
FIG. 2.

AFM image of a deep and wide nanochannels (left), and a section analysis showing the extremely smooth surface on the bottom of the same channel (right).

Image of FIG. 3.
FIG. 3.

Typical still image of the filling process of the deep channels. The meniscus is located around the mark. The contrast has been slightly increased compared to the original microscope image.

Image of FIG. 4.
FIG. 4.

Measured position of the moving meniscus as a function of for filling of 5, 11, 23, and deep nanochannels with DI water [at temperatures of 22.7, 22.2, 21.6, and , respectively].

Image of FIG. 5.
FIG. 5.

The dimensionless correction factor for the measurements of Fig. 4. The deviation from the calculated value increases gradually for smaller channel heights and reaches for the channels. The red line indicates the effect of a solidified layer next to the channel walls with a thickness of or four monolayers.

Tables

Generic image for table
Table I.

Measured trench depths after etching of the spacer layer in 1% HF.

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/content/aip/journal/jap/104/1/10.1063/1.2952053
2008-07-10
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Capillary filling of sub-10nm nanochannels
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/1/10.1063/1.2952053
10.1063/1.2952053
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