Schematic diagram of MSM under an applied voltage. Positive bias is applied to the right and negative bias is applied to the left.
For a carrier concentration of , a barrier height , a contact area of , at room temperature. (a) characteristic of thermionic emission. The current before breakdown at reverse contact follow Eq. (6), and the curve is very flat. The slope increases after breakdown occurs.(Note that dash lines do not come from the calculation, but the estimation of the current after breakdown.) The inset is the observation of the curve at very small current. (b) In the case of thermionic emission combined with tunneling, the curve follows Eq. (11). The slope of is already increased without breakdown at reverse contact. The Forward (F), Reverse (R), and Breakdown (B) are labeled.
(a) Schematic of ZnO NW FET with contact pads on the highly doped substrate. (b) The curve for varying (, ).
(a) curve of as-grown ZnO NWs on substrate. Inset shows a SEM image of the ZnO NW contacted with metal tips. The NW diameter is . (b) curve of as-grown ZnO NW on GaN/sapphire substrate. Inset show a SEM image of the ZnO NW contacted with metal tips. The NW diameter is .
Fitting curve with double exponential function, .
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