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Electrical analysis of individual ZnO nanowires
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10.1063/1.2953172
/content/aip/journal/jap/104/1/10.1063/1.2953172
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/1/10.1063/1.2953172
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of MSM under an applied voltage. Positive bias is applied to the right and negative bias is applied to the left.

Image of FIG. 2.
FIG. 2.

For a carrier concentration of , a barrier height , a contact area of , at room temperature. (a) characteristic of thermionic emission. The current before breakdown at reverse contact follow Eq. (6), and the curve is very flat. The slope increases after breakdown occurs.(Note that dash lines do not come from the calculation, but the estimation of the current after breakdown.) The inset is the observation of the curve at very small current. (b) In the case of thermionic emission combined with tunneling, the curve follows Eq. (11). The slope of is already increased without breakdown at reverse contact. The Forward (F), Reverse (R), and Breakdown (B) are labeled.

Image of FIG. 3.
FIG. 3.

(a) Schematic of ZnO NW FET with contact pads on the highly doped substrate. (b) The curve for varying (, ).

Image of FIG. 4.
FIG. 4.

(a) curve of as-grown ZnO NWs on substrate. Inset shows a SEM image of the ZnO NW contacted with metal tips. The NW diameter is . (b) curve of as-grown ZnO NW on GaN/sapphire substrate. Inset show a SEM image of the ZnO NW contacted with metal tips. The NW diameter is .

Image of FIG. 5.
FIG. 5.

Fitting curve with double exponential function, .

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/content/aip/journal/jap/104/1/10.1063/1.2953172
2008-07-10
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical analysis of individual ZnO nanowires
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/1/10.1063/1.2953172
10.1063/1.2953172
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