(a) The calculated depth distribution for O implanted into Si with 150 keV to (inside the ED window) and the corresponding BOX (hatched area) are shown. The position indicates the interface. Arrows demonstrate the direction of O redistribution. (b) For comparison the excess vacancy profile and the excess interstitial profile are shown below. The position marks the change from the vacancy region to the interstitial region. The horizontal bar indicates the BOX position centered at the maximum O concentration.
(a) Overlay of the XTEM image and the oxygen profile measured by SIMS (taken from Ref. 24) for implantation of 200 keV, at into Si and annealing at for 5 h in Ar. The bar above the XTEM image indicates the thickness of the corresponding BOX. (b) The calculated local difference in interstitials and vacancies is shown below. Implantation-generated excess defects are presented by a thin line, whereas the thick line with circles also takes into account interstitials generated by the oxide formation. The boundaries and of the junction region are indicated.
Calculated depth positions of the maximum concentration and of the junction depth are shown for oxygen implantation as a function of ion energy. The junction region according to Fig. 2(b) is the spacing between the boundaries (dots) and (circles). For comparison positions of experimentally observed oxide precipitate layers (squares) are included. Hollow squares represent weak (first dissolved) precipitate layers. Experimental results were taken from Ono and Ogura (Ref. 27) and Tamura et al.(Ref. 28).
Calculated depth profiles of excess vacancies and excess interstitials for Si implanted with 200 keV O ions (right scale). The arrow at indicates the position of the junction between and . The depth positions of the BOX interfaces and of the critical O concentration are shown vs the O dose (left scale). Two horizontal bars demonstrate the extension of the BOX for O implantation in the ED window and for stoichiometric O implantation at the HD threshold .
(a) The calculated amount of silicon excess and of oxygen deficit in the BOX region is shown for implantation of 200 keV O ions in dependence of the ion dose. In addition, the amount of silicon excess is indicated in the coalescence dominated region where the oxygen concentration is above the critical concentration . (b) The ED window and the HD threshold are marked. The as-implanted oxygen concentration at the surface-near BOX interface is shown vs dose.
Comparison of two data sets of ED windows (fat curves) experimentally determined by Chen et al. (Ref. 19) and by Tamura et al. (Ref. 28). The calculated ED window region spans between the ED curves for a BOX position at (full triangles) and at (hollow triangles). The O dose, for which the maximum concentration of oxygen is the critical concentration , is given by the dashed line. Curves were slightly smoothed. The cross shows the result for MLD implantation as reported by Holland et al.(Ref. 2).
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