Schematic structure of CNT-FET biosensors: (a) biosensor without metal gate (sensor I) and (b) biosensor with metal gate (sensor II).
Experimental setup for biosensing of antigens.
Drain current-top gate voltage characteristics for (a) sensors I and (b) II. For both biosensors, back gate voltage was maintained at .
Dependence of drain current on PSA concentration for CNT-FET biosensors (solid line indicates sensor I and dashed line indicates sensor II). For both biosensors, drain voltage , top gate voltage , and back gate voltage were maintained at , , and , respectively.
Calculated potential profile for (a) sensors I and (b) II. Dashed and solid lines show the potential profile before and after antigen-antibody reactions, respectively.
Parameters used in calculation.
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