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Comparison of sensitivities of carbon nanotube field-effect transistor biosensors with and without top metal gate
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10.1063/1.3020688
/content/aip/journal/jap/104/10/10.1063/1.3020688
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/10/10.1063/1.3020688

Figures

Image of FIG. 1.
FIG. 1.

Schematic structure of CNT-FET biosensors: (a) biosensor without metal gate (sensor I) and (b) biosensor with metal gate (sensor II).

Image of FIG. 2.
FIG. 2.

Experimental setup for biosensing of antigens.

Image of FIG. 3.
FIG. 3.

Drain current-top gate voltage characteristics for (a) sensors I and (b) II. For both biosensors, back gate voltage was maintained at .

Image of FIG. 4.
FIG. 4.

Dependence of drain current on PSA concentration for CNT-FET biosensors (solid line indicates sensor I and dashed line indicates sensor II). For both biosensors, drain voltage , top gate voltage , and back gate voltage were maintained at , , and , respectively.

Image of FIG. 5.
FIG. 5.

Calculated potential profile for (a) sensors I and (b) II. Dashed and solid lines show the potential profile before and after antigen-antibody reactions, respectively.

Tables

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Table I.

Parameters used in calculation.

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/content/aip/journal/jap/104/10/10.1063/1.3020688
2008-11-17
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparison of sensitivities of carbon nanotube field-effect transistor biosensors with and without top metal gate
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/10/10.1063/1.3020688
10.1063/1.3020688
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