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Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon
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Image of FIG. 1.
FIG. 1.

Unit cell schematic showing Si (light), As substitution sites (dark), and Si vacancy (white).

Image of FIG. 2.
FIG. 2.

SIMS determined arsenic profiles of as-implanted and LA samples at 1100 and . Sample 1, as implanted. Sample 2, LA at . Sample 3, LA at ; Sample 4, LA at .

Image of FIG. 3.
FIG. 3.

FT EXAFS data and the corresponding fits for LA samples: (1) as implanted, (2) LA , (3) LA , and (4) LA . The reference sample and the as-implanted sample (data only) were plotted for comparison purposes of the second shell structures.

Image of FIG. 4.
FIG. 4.

Arsenic SIMS profiles before and after etch for samples with RTP and LA followed by RTP. The etched sample SIMS profiles were rigidly shifted to match the As tail as depicted in the figure in order to know how much As was removed.

Image of FIG. 5.
FIG. 5.

FT EXAFS data for the RTP and the sample. (5) RTP . (6) LA . FT data for the etched samples, and above and below critical angle measurements, were shown with the reference samples for comparison purposes.


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Table I.

Description and Hall effect results for LA and rapid thermal annealed samples.

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Table II.

Fractional atomic displacements for geometry optimized states.

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Table III.

Active As fraction from Hall effect measurements and fraction of the As complexes obtained from least-squares EXAFS fits.

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Table IV.

Coordination numbers, near-neighbor distances, and Debye–Waller factors from EXAFS fits.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon