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Characteristics of amorphous thin film and its ultrafast crystallization
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10.1063/1.3026720
/content/aip/journal/jap/104/10/10.1063/1.3026720
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/10/10.1063/1.3026720

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of 200-nm-thick (a) and (b) films as a function of the annealing temperature. The insets represent the AFM surface images of the annealed films. The peaks marked by the blank (◻) and filled (◼) squares correspond to fcc and hexagonal phases, respectively.

Image of FIG. 2.
FIG. 2.

Optical microscope images of (a) and (b) films illuminated by the nanopulse laser beams and (c) SEM images of (a). Here, and axes represent the -variation of 15 steps (, step ) and -axis is the -variation of 15 steps (, step ). The insets of (c) represent magnified SEM images for special positions: (i) initial region (no spot), (ii) , , (iii) , , and (iv) , . The illuminated optical energy required for burning was evaluated to be approximately 10.0 and 7.7 nJ for the and thin films, respectively.

Image of FIG. 3.
FIG. 3.

Energy band diagram for amorphous chalcogenide suggested in this paper. It is sketched on the basis of the modified Mott and VAP models. Here, it is assumed that the additive Ag atom acts as a donorlike trap (uncompensated ion). onefold chalcogen defect (dangling-bond), threefold chalcogen defect, and , gray tails.

Image of FIG. 4.
FIG. 4.

3D mesh and the corresponding power-time effect plots for the nanopulse reflection response in [(a) and (c)] and [(b) and (d)] films. Symbols I and II in (a) and (c) represent the amorphous and crystalline regions, respectively. The reflection difference is , where and are the intensities before and after illumination, respectively.

Image of FIG. 5.
FIG. 5.

Log-scaled plots of vs pulse duration for relatively low power . Here, represents the sensitivity defined as a pulse duration corresponding to 50% of the maximum and is the threshold pulse duration.

Image of FIG. 6.
FIG. 6.

Plots vs for (a) the as-deposited and films and (b) the annealed films. The optical energy gap is obtained from the intercept on the energy axis of the plot and and represent the slopes in the extended region and the Urbach tail region, respectively. Two slopes relate to randomness in the atomic and electronic configurations.

Image of FIG. 7.
FIG. 7.

Dependence of sheet resistance on annealing temperature for the 200-nm-thick (●) and (○) films. Films were annealed in a atmosphere for 1 h at (heating rate ) and all points were average values for three time measurements.

Tables

Generic image for table
Table I.

The quantities of , , and determined by the -axis intercept and two slopes in Fig. 6.

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/content/aip/journal/jap/104/10/10.1063/1.3026720
2008-11-19
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characteristics of amorphous Ag0.1(Ge2Sb2Te5)0.9 thin film and its ultrafast crystallization
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/10/10.1063/1.3026720
10.1063/1.3026720
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