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Impact of carrier localization on the photoluminescence characteristics of (Ga,In)(N,As) and (Ga,In)(N,As,Sb) quantum wells
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10.1063/1.3031652
/content/aip/journal/jap/104/11/10.1063/1.3031652
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/11/10.1063/1.3031652

Figures

Image of FIG. 1.
FIG. 1.

(a) PL spectra of samples 1 and 2 measured at 290 K. Plot of PL intensities at 290 (b) and 15 K (c) for the two sets of (Ga,In)(N,As) (◻) and (Ga,In)(N,As,Sb) QWs (◻) grown at different /(group III) BEP ratio. The data points corresponding to samples 1 and 2 are highlighted.

Image of FIG. 2.
FIG. 2.

PL spectra for samples 1 (a) and 2 (b) measured at different excitation density at 15 K.

Image of FIG. 3.
FIG. 3.

PL spectra for samples 1 (a) and 2 (b) measured at 15 K and of . The open circles are experimental data and the solid lines are the fit using Eq. (1). The vertical bars indicate the free-state transition energy deduced from the fit shown with a solid line in Fig. 4.

Image of FIG. 4.
FIG. 4.

Temperature dependence of the PL peak energy measured at different as indicated in the figure. The solid lines are fits using Eq. (2).

Image of FIG. 5.
FIG. 5.

Temperature dependence of the quantum efficiency for samples 1 and 2. The symbols are experimental data obtained from the integrated PL intensity.

Image of FIG. 6.
FIG. 6.

Schematics of the coupling between and recombination from localized and free states.

Tables

Generic image for table
Table I.

Composition of the two samples under investigation. Listed are the sample numbers, materials, and concentrations of In, N, and Sb within the QWs. The Ga(N,As) barriers contain about 0.5% N in both samples.

Generic image for table
Table II.

Parameters , , and obtained from the fit of the PL line shape shown in Fig. 3 as well as , , and obtained from the fit of the PL peak energy shown in Fig. 4. The largest energy deviation between the fit and the experimental data is also shown.

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/content/aip/journal/jap/104/11/10.1063/1.3031652
2008-12-01
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of carrier localization on the photoluminescence characteristics of (Ga,In)(N,As) and (Ga,In)(N,As,Sb) quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/11/10.1063/1.3031652
10.1063/1.3031652
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