(a) PL spectra of samples 1 and 2 measured at 290 K. Plot of PL intensities at 290 (b) and 15 K (c) for the two sets of (Ga,In)(N,As) (◻) and (Ga,In)(N,As,Sb) QWs (◻) grown at different /(group III) BEP ratio. The data points corresponding to samples 1 and 2 are highlighted.
PL spectra for samples 1 (a) and 2 (b) measured at different excitation density at 15 K.
PL spectra for samples 1 (a) and 2 (b) measured at 15 K and of . The open circles are experimental data and the solid lines are the fit using Eq. (1). The vertical bars indicate the free-state transition energy deduced from the fit shown with a solid line in Fig. 4.
Temperature dependence of the PL peak energy measured at different as indicated in the figure. The solid lines are fits using Eq. (2).
Temperature dependence of the quantum efficiency for samples 1 and 2. The symbols are experimental data obtained from the integrated PL intensity.
Schematics of the coupling between and recombination from localized and free states.
Composition of the two samples under investigation. Listed are the sample numbers, materials, and concentrations of In, N, and Sb within the QWs. The Ga(N,As) barriers contain about 0.5% N in both samples.
Parameters , , and obtained from the fit of the PL line shape shown in Fig. 3 as well as , , and obtained from the fit of the PL peak energy shown in Fig. 4. The largest energy deviation between the fit and the experimental data is also shown.
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