1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Al electrode dependent transition to bipolar resistive switching characteristics in pure films
Rent:
Rent this article for
USD
10.1063/1.3032896
/content/aip/journal/jap/104/11/10.1063/1.3032896
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/11/10.1063/1.3032896
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional TEM images of the (a) structure (Al top electrode) and (b) structure (Al bottom electrode).

Image of FIG. 2.
FIG. 2.

AES profiles of the (a) sample (Al top electrode) and (b) sample (Al bottom electrode).

Image of FIG. 3.
FIG. 3.

characteristics of (a) device (CW switching) and (b) device (CCW switching). The insets show the schematic structures of the samples.

Image of FIG. 4.
FIG. 4.

LRS and HRS current states of the structure by imposing (a) different current compliances (at forming process. set/reset/read voltage: ) and (b) various set/reset voltages (after forming process, compliance current: 10 mA).

Image of FIG. 5.
FIG. 5.

(a) Endurance and (b) retention properties of the top- structure (sample A and set/reset/read voltage: ).

Loading

Article metrics loading...

/content/aip/journal/jap/104/11/10.1063/1.3032896
2008-12-09
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Al electrode dependent transition to bipolar resistive switching characteristics in pure TiO2 films
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/11/10.1063/1.3032896
10.1063/1.3032896
SEARCH_EXPAND_ITEM