Cross-sectional TEM images of the (a) structure (Al top electrode) and (b) structure (Al bottom electrode).
AES profiles of the (a) sample (Al top electrode) and (b) sample (Al bottom electrode).
characteristics of (a) device (CW switching) and (b) device (CCW switching). The insets show the schematic structures of the samples.
LRS and HRS current states of the structure by imposing (a) different current compliances (at forming process. set/reset/read voltage: ) and (b) various set/reset voltages (after forming process, compliance current: 10 mA).
(a) Endurance and (b) retention properties of the top- structure (sample A and set/reset/read voltage: ).
Article metrics loading...
Full text loading...