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Electron carrier concentration dependent magnetization and transport properties in ZnO:Co diluted magnetic semiconductor thin films
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10.1063/1.3033402
/content/aip/journal/jap/104/11/10.1063/1.3033402
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/11/10.1063/1.3033402

Figures

Image of FIG. 1.
FIG. 1.

SIMS spectra for (a) the as-grown ZnO thin film, (b) the ZnO:Co thin film after Co ion implantation, but before annealing, and (c) the ZnO:Co thin film after annealing at for 5 min (sample A). The magnetic measurements were all performed on the annealed samples.

Image of FIG. 2.
FIG. 2.

(a) Cross-sectional TEM image of a ZnO:Co thin film on a sapphire substrate (sample A). SAED patterns of (b) ZnO:Co thin film and (c) sapphire substrate, taken from the areas indicated by the white circles.

Image of FIG. 3.
FIG. 3.

(a) Cross-sectional HRTEM image of the interface between the ZnO:Co thin film and the sapphire substrate in sample A, showing an atomically sharp interface. (b) HRTEM image of the ZnO:Co thin film (sample A). The film has high crystallinity with no observable secondary phase.

Image of FIG. 4.
FIG. 4.

XRD spectra of (a) ZnO and (b) ZnO:Co thin films (sample A). Both the ZnO and ZnO:Co thin films show high crystallinity with no impurity phases within the detection limit of the system.

Image of FIG. 5.
FIG. 5.

(a) The magnetic field dependence of the magnetization for a ZnO:Co thin film (sample A) measured at 300 and 10 K (inset). (b) The temperature dependence of the saturated magnetization, from 2 to 800 K measured with an applied field of 0.2 T. A high temperature extrapolation of the data indicates that the Curie temperature is around 950 K. The inset shows the field dependence of the magnetization of this sample measured at 700 K.

Image of FIG. 6.
FIG. 6.

(a) The magnetic field dependence of the magnetization for ZnO:Co thin film samples B, C, and D measured at a temperature of 300 K. (b) The dependence of the saturated magnetization on electron carrier concentration in ZnO:Co thin film samples. A polynomial fitting to the data is indicated with the dashed line.

Image of FIG. 7.
FIG. 7.

Magnetic anisotropy of a ZnO:Co thin film (sample E) measured at a temperature of 300 K. The in-plane field dependence of the magnetization (solid circles) is stronger than out-of-plane magnetization (open circles).

Image of FIG. 8.
FIG. 8.

(a) Transverse MR, , of a ZnO:Co thin film (sample E) measured at different temperatures from 2 to 300 K. The applied magnetic field was perpendicular to the plane of the film. [(b)–(e)] The temperature dependence of the MR at different magnetic fields of 8, 5, 2, and 1 T.

Image of FIG. 9.
FIG. 9.

(a) The Hall resistance as a function of the applied magnetic field for a ZnO:Co thin film (sample E) measured at a temperature of 50 K. The inset shows the AHE data over an expended field range near the origin after the linear OHE contribution was subtracted. [(b)–(c)] The Hall resistance as a function of the applied magnetic field for the same ZnO:Co thin film sample measured at the temperatures of 10 and 300 K.

Image of FIG. 10.
FIG. 10.

Temperature dependence of the resistivity of a ZnO:Co thin film (sample E).

Image of FIG. 11.
FIG. 11.

The ratio of the anomalous Hall resistivity to the resistivity as a function of the resistivity .

Tables

Generic image for table
Table I.

Electron carrier concentrations before and after implantation and the saturated magnetization of ZnO:Co thin film samples. The data were taken at room temperature. Note that stands for the Bohr magneton.

Generic image for table
Table II.

The resistivity , ordinary Hall coefficient , anomalous Hall coefficient , electron carrier concentration , and the ratio for ZnO:Co thin film sample E. Data were measured at the temperatures of 10, 50, and 300 K.

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/content/aip/journal/jap/104/11/10.1063/1.3033402
2008-12-04
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron carrier concentration dependent magnetization and transport properties in ZnO:Co diluted magnetic semiconductor thin films
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/11/10.1063/1.3033402
10.1063/1.3033402
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