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Correlation between carrier mobility of pentacene thin-film transistor and surface passivation of its gate dielectric
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10.1063/1.3040004
/content/aip/journal/jap/104/11/10.1063/1.3040004
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/11/10.1063/1.3040004

Figures

Image of FIG. 1.
FIG. 1.

Output characteristics of OTFTs with gate dielectric annealed in at different temperatures.

Image of FIG. 2.
FIG. 2.

Transfer characteristics of the OTFTs with .

Image of FIG. 3.
FIG. 3.

Scanning-electron microscopy for the pentacene film of the OTFTs with a magnification factor of .

Image of FIG. 4.
FIG. 4.

Carrier mobility of the OTFT and nitrogen atomic percentage at the surface of its gate dielectric vs the temperature of the annealing.

Image of FIG. 5.
FIG. 5.

Subthreshold characteristics of the OTFTs with .

Tables

Generic image for table
Table I.

Parameters of the OTFTs with gate oxide annealed in at different temperatures. Gate-oxide roughness by AFM and pentacene grain size by SEM.

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/content/aip/journal/jap/104/11/10.1063/1.3040004
2008-12-12
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Correlation between carrier mobility of pentacene thin-film transistor and surface passivation of its gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/11/10.1063/1.3040004
10.1063/1.3040004
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