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Output characteristics of OTFTs with gate dielectric annealed in at different temperatures.
Transfer characteristics of the OTFTs with .
Scanning-electron microscopy for the pentacene film of the OTFTs with a magnification factor of .
Carrier mobility of the OTFT and nitrogen atomic percentage at the surface of its gate dielectric vs the temperature of the annealing.
Subthreshold characteristics of the OTFTs with .
Parameters of the OTFTs with gate oxide annealed in at different temperatures. Gate-oxide roughness by AFM and pentacene grain size by SEM.
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