1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices
Rent:
Rent this article for
USD
10.1063/1.3041475
/content/aip/journal/jap/104/11/10.1063/1.3041475
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/11/10.1063/1.3041475
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of the thin films on according to the postdeposition annealing temperatures. [ stands for the monoclinic phase of and denotes hafnium silicate phase.]

Image of FIG. 2.
FIG. 2.

(a) Hf and (b) O core-level XPS spectra of the film annealed at in oxygen ambient. Binding energies for and were found to be 16.9 and 530.1 eV, respectively.

Image of FIG. 3.
FIG. 3.

Resistance switching behavior of -based memory devices according to the postdeposition annealing temperatures from (a) to (f) with increment of . The thickness of film was 20 nm.

Image of FIG. 4.
FIG. 4.

(a) and distributions of -based memory devices as a function of the postdeposition annealing temperatures. (b) Variation in the on-state and off-state current levels according to the postannealing temperatures. The current was measured at 0.2 V.

Image of FIG. 5.
FIG. 5.

(a) and distributions of -based memory devices as a function of the thickness of thin film annealed at . (b) Variation in the on-state and off-state current levels according to the thickness of thin film annealed at . The current was measured at 0.2 V.

Image of FIG. 6.
FIG. 6.

(a) Retention and (b) endurance properties of the -based memory devices annealed at . Reading was done at 0.2 V.

Image of FIG. 7.
FIG. 7.

Conduction properties of the -based memory devices annealed at . (a) Typical current density vs applied bias curves. (b) The conduction characteristics of the high-resistance state at the high applied bias voltage regime and (c) the low resistance state at the low applied bias voltage regime.

Loading

Article metrics loading...

/content/aip/journal/jap/104/11/10.1063/1.3041475
2008-12-15
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/11/10.1063/1.3041475
10.1063/1.3041475
SEARCH_EXPAND_ITEM