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Slow trap charging and detrapping in the negative bias temperature instability in HfSiON dielectric based field effect transistors
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10.1063/1.3039997
/content/aip/journal/jap/104/12/10.1063/1.3039997
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/12/10.1063/1.3039997
/content/aip/journal/jap/104/12/10.1063/1.3039997
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/content/aip/journal/jap/104/12/10.1063/1.3039997
2008-12-19
2014-10-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Slow trap charging and detrapping in the negative bias temperature instability in HfSiON dielectric based field effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/12/10.1063/1.3039997
10.1063/1.3039997
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