Variation in (◻) the fractional threshold voltage shift and (○) fractional mobility shift as a function of time for devices biased at out of 4380 s and then relaxed at 0 V out of another 4380 s. The device temperature was 398 K.
Variation in the threshold voltage shift (a) and mobility ratio (b) as a function of bias stress time at the four temperatures studied: (◻) 293 K, (○) 363 K, (△) 398 K, and (▽) 433 K. Out of 4380 s the device was biased with respect to the source, drain, and body contacts. From 4380 to 8760 s all of the contacts were shorted.
Breakdown of the 433 K data in Fig. 3 into interface state (◻) and oxide trapped charge (△) components. Absolute values and temperature variations are dominated by the oxide trapped charge term.
Plots of vs for data such as that in Figs. 2(a) and 2(b).
Plots of (○) and (△) vs reciprocal absolute temperature for fits of the expression to the experimental data which includes approximate estimation of the rapid relaxation component.
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