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An alternative approach to understand the photoluminescence and the photoluminescence peak shift with excitation in porous silicon
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10.1063/1.3043626
/content/aip/journal/jap/104/12/10.1063/1.3043626
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/12/10.1063/1.3043626
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectra of PS at various excitation energies normalized with the excitation photon flux prepared by pulsed current electrochemical etching with current density for 5 min: (a) as prepared and (b) stored in ambient condition for 5 months from preparation. Also shown are the PL spectra of PS prepared using constant current density and stored in ambient for 10 months: (c) current density for 15 min and (d) current density for 5 min.

Image of FIG. 2.
FIG. 2.

PLE spectra of PS at various emission energies normalized with the excitation photon flux prepared by pulsed current electrochemical etching with current density for 5 min: (a) as prepared and (b) stored in ambient condition for 5 months from preparation. Also shown are the PL spectra of PS prepared using constant current density and stored in ambient for 10 months: (c) current density for 15 min and (d) current density for 5 min.

Image of FIG. 3.
FIG. 3.

Theoretical simulation of normal incidence absorption spectrum for a Si film of 3 nm thickness with the bulk optical constants of Si.

Image of FIG. 4.
FIG. 4.

The dispersion of real and imaginary part of refractive index obtained from the spectroscopic ellipsometry data of the -Si substrate. In the calculation, no corrections have been made for the possible presence of oxides on the crystal surface.

Image of FIG. 5.
FIG. 5.

Regular normal incidence FTIR transmission spectrum of as-prepared PS by pulsed current electrochemical etching with current density for 5 min.

Image of FIG. 6.
FIG. 6.

PL spectra recorded at 3.31 eV excitation energy normalized with the excitation photon flux of both as prepared and stored in ambient condition for 5 months prepared by pulsed current electrochemical etching with current density for 5 min.

Image of FIG. 7.
FIG. 7.

Regular normal incidence FTIR transmission spectra of both as prepared and stored in ambient condition for 5 months prepared by pulsed current electrochemical etching with current density for 5 min in the wavenumber range from 400 to . The vibrational absorption modes are attributed (Ref. 34) as follows: to Si–H bending in , to Si–H wagging, 827 to SiO bending in O–Si–O, to wagging, to scissor, to SiH bending in , to SiH bending in , and to SiO stretching in O–SiO and C–SiO.

Image of FIG. 8.
FIG. 8.

Regular normal incidence FTIR transmission spectra of both as prepared and stored in ambient condition for 5 months prepared by pulsed current electrochemical etching with current density for 5 min in the wavenumber range from 1975 to . The vibrational absorption modes are attributed (Ref. 34) as follows: to SiH stretching in , to SiH stretching in , to SiH stretching in , and to SiH stretching in .

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/content/aip/journal/jap/104/12/10.1063/1.3043626
2008-12-17
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: An alternative approach to understand the photoluminescence and the photoluminescence peak shift with excitation in porous silicon
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/12/10.1063/1.3043626
10.1063/1.3043626
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